公开(公告)号：US20030197176A1

公开(公告)日：2003-10-23

申请号：US10128368

申请日：2002-04-22

Applicant: Glimmerglass Networks, Inc.

Inventor： James P. Spallas ,  Andres Fernandez ,  Thomas DeBey ,  Lawrence P. Muray

IPC: H01L029/04

CPC classification number: B81C1/00119 ,  B81B2201/042 ,  B81C2201/0104 ,  B81C2201/014 ,  B81C2201/017 ,  B81C2201/019

Abstract: Method for fabricating ultrathin gaps producing ultrashort standoffs in array structures includes sandwiching a patterned device layer between a silicon standoff layer and a silicon support layer, providing that the back surfaces of the respective silicon support layer and the standoff layer are polished to a desired thickness corresponding to the desired standoff height on one side and to at least a minimum height for mechanical strength on the opposing side, as well as to a desired smoothness. Standoffs and mechanical supports are then fabricated by etching to produce voids with the dielectric oxides on both sides of the device layer serving as suitable etch stops. Thereafter, the exposed portions of the oxide layers are removed to release the pattern, and a package layer is mated with the standoff voids to produce a finished device. The standoff layer can be fabricated to counteract curvature.

Abstract translation: 用于制造在阵列结构中产生超短距离的超薄间隙的方法包括在硅隔离层和硅支撑层之间夹着图案化的器件层，条件是相应的硅支撑层和支座层的背面被抛光到相应的所需厚度 达到一侧上所需的间隔高度，并且至少在相对侧上的机械强度的最小高度以及期望的平滑度。 然后通过蚀刻制造支座和机械支撑件以产生空隙，其中装置层两侧的电介质氧化物用作合适的蚀刻停止点。 此后，去除氧化物层的暴露部分以释放图案，并且将封装层与间隙空隙配合以产生成品装置。 可以制造隔离层以抵消曲率。