公开(公告)号：US20030197176A1

公开(公告)日：2003-10-23

申请号：US10128368

申请日：2002-04-22

Applicant: Glimmerglass Networks, Inc.

Inventor： James P. Spallas ,  Andres Fernandez ,  Thomas DeBey ,  Lawrence P. Muray

IPC: H01L029/04

CPC classification number: B81C1/00119 ,  B81B2201/042 ,  B81C2201/0104 ,  B81C2201/014 ,  B81C2201/017 ,  B81C2201/019

Abstract: Method for fabricating ultrathin gaps producing ultrashort standoffs in array structures includes sandwiching a patterned device layer between a silicon standoff layer and a silicon support layer, providing that the back surfaces of the respective silicon support layer and the standoff layer are polished to a desired thickness corresponding to the desired standoff height on one side and to at least a minimum height for mechanical strength on the opposing side, as well as to a desired smoothness. Standoffs and mechanical supports are then fabricated by etching to produce voids with the dielectric oxides on both sides of the device layer serving as suitable etch stops. Thereafter, the exposed portions of the oxide layers are removed to release the pattern, and a package layer is mated with the standoff voids to produce a finished device. The standoff layer can be fabricated to counteract curvature.

Abstract translation: 用于制造在阵列结构中产生超短距离的超薄间隙的方法包括在硅隔离层和硅支撑层之间夹着图案化的器件层，条件是相应的硅支撑层和支座层的背面被抛光到相应的所需厚度 达到一侧上所需的间隔高度，并且至少在相对侧上的机械强度的最小高度以及期望的平滑度。 然后通过蚀刻制造支座和机械支撑件以产生空隙，其中装置层两侧的电介质氧化物用作合适的蚀刻停止点。 此后，去除氧化物层的暴露部分以释放图案，并且将封装层与间隙空隙配合以产生成品装置。 可以制造隔离层以抵消曲率。

公开(公告)号：US20040095629A1

公开(公告)日：2004-05-20

申请号：US10700734

申请日：2003-11-03

Applicant: Glimmerglass Networks, Inc.

Inventor： Bryan P. Staker ,  Lawrence P. Muray ,  Andres Fernandez

IPC: G02F001/03 ,  G02F001/07

CPC classification number: G02B26/0841 ,  B81B3/0086 ,  B81B2201/042

Abstract: In an electrostatically controlled deflection apparatus, such as a MEMS array having cavities formed around electrodes and which is mounted directly on a dielectric or controllably resistive substrate in which are embedded electrostatic actuation electrodes disposed in alignment with the individual MEMS elements, a mechanism is provided to mitigate the effects of uncontrolled dielectric surface potentials between the MEMS elements and the electrostatic actuation electrodes, the mechanism being raised electrodes relative to the dielectric or controllably resistive surface of the substrate. The aspect ratio of the gaps between elements (element height to element separation ratio) is at least 0.1 and preferably at least 0.5 and preferably between 0.75 and 2.0 with a typical choice of about 1.0, assuming a surface fill factor of 50% or greater. Higher aspect ratios at these fill factors are believed not to provide more than marginal improvement.

Abstract translation: 在静电控制的偏转装置中，例如具有围绕电极形成的空腔的MEMS阵列，其直接安装在电介质或可控电阻衬底上，其中嵌入的静电致动电极与各个MEMS元件对齐设置， 减轻MEMS元件和静电致动电极之间不受控制的电介质表面电位的影响，该机构是相对于基板的电介质或可控制的电阻表面而升高的电极。 假设表面填充因子为50％以上，元件之间的间隙（元件高度与元素分离比）的纵横比为至少0.1，优选为至少0.5，优选为0.75至2.0，典型的选择为约1.0。 这些填充因子的较高纵横比被认为不能提供更多的边际改进。

公开(公告)号：US20040001263A1

公开(公告)日：2004-01-01

申请号：US10625883

申请日：2003-07-22

Applicant: Glimmerglass Networks, Inc.

Inventor： Bryan P. Staker ,  James P. Spallas ,  Lawrence P. Muray ,  Andres Femandez

IPC: G02B007/182

CPC classification number: B81B3/0051 ,  B81B2201/042 ,  G02B26/0841

Abstract: A MEMS device having a fixed element and a movable element wherein one or the other of the fixed element and the movable element has at least one radially-extended stop or overdeflection limiter. A fixed overlayer plate forms an aperture. The aperture is sized to minimize vignetting and may be beveled on the margin. Overdeflection limitation occurs during deflection before the movable element can impinge on an underlying electrode. The overdeflection limiter may be conveniently placed adjacent a gimbaled hinge.