公开(公告)号：US20210013166A1

公开(公告)日：2021-01-14

申请号：US16508288

申请日：2019-07-10

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： RAMASAMY CHOCKALINGAM ,  JUAN BOON TAN ,  IAN MELVILLE

IPC: H01L23/00

Abstract: The disclosed subject matter relates to a structure and method to improve bond pad reliability of semiconductor devices. According to an aspect of the present disclosure, a bond pad structure is provided that includes a dielectric layer and at least one bond pad in the dielectric layer, wherein the bond pad has a top surface. A passivation layer has an opening over the bond pad, wherein the opening has sidewalls. A low-k barrier layer is covering the sidewalls of the opening and the top surface of the bond pad. Protective structures are formed over the sidewalls of the opening.

公开(公告)号：US20210134742A1

公开(公告)日：2021-05-06

申请号：US16669531

申请日：2019-10-31

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： RAMASAMY CHOCKALINGAM ,  JUAN BOON TAN ,  CHEE KONG LEONG ,  RANJAN RAJOO ,  XUESONG RAO ,  XIAODONG LI

IPC: H01L23/00

Abstract: A semiconductor device is provided that includes a dielectric layer, a bond pad, a passivation layer and a planar barrier. The bond pad is positioned in the dielectric layer. The passivation layer is positioned over the dielectric layer and has an opening over the bond pad. The planar barrier is positioned on the bond pad.

公开(公告)号：US20220252534A1

公开(公告)日：2022-08-11

申请号：US17173237

申请日：2021-02-11

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： EE JAN KHOR ,  JUAN BOON TAN ,  RAMASAMY CHOCKALINGAM

IPC: G01N27/22 ,  H01L23/00

Abstract: The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. More particularly, the present disclosure relates to a method of forming a sensor device and a bond pad in the same dielectric region. The present disclosure also relates to the semiconductor devices formed by the method disclosed herein.

公开(公告)号：US20240063154A1

公开(公告)日：2024-02-22

申请号：US18501319

申请日：2023-11-03

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： EE JAN KHOR ,  JUAN BOON TAN ,  RAMASAMY CHOCKALINGAM

IPC: H01L23/00 ,  G01N27/22

CPC classification number: H01L24/05 ,  G01N27/225 ,  H01L24/03 ,  H01L24/06 ,  H01L2224/02206 ,  H01L2224/0382

Abstract: The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. More particularly, the present disclosure relates to a method of forming a sensor device and a bond pad in the same dielectric region. The present disclosure also relates to the semiconductor devices formed by the method disclosed herein.

公开(公告)号：US20230217843A1

公开(公告)日：2023-07-06

申请号：US17647006

申请日：2022-01-04

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： JIANXUN SUN ,  RAMASAMY CHOCKALINGAM ,  JUAN BOON TAN

IPC: H01L45/00

CPC classification number: H01L45/1246 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/1675

Abstract: A semiconductor memory device is provided. The memory device includes a first electrode, a resistive layer, and a second electrode. The resistive layer is arranged over the first electrode. The second electrode is arranged over the resistive layer. The second electrode includes a lower surface and an extension extending from under the lower surface. The extension is at least partially arranged within the resistive layer.