公开(公告)号：US20230420326A1

公开(公告)日：2023-12-28

申请号：US17808110

申请日：2022-06-22

Applicant: GlobalFoundries U.S. INC.

Inventor： ZHONG-XIANG HE ,  RAMSEY HAZBUN ,  RAJENDRAN KRISHNASAMY ,  JOHNATAN AVRAHAM KANTAROVSKY ,  MICHEL ABOU-KHALIL ,  RICHARD RASSEL

IPC: H01L23/367 ,  H01L23/48 ,  H01L21/48

CPC classification number: H01L23/367 ,  H01L29/778 ,  H01L21/4882 ,  H01L23/481

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.