公开(公告)号：US20230155016A1

公开(公告)日：2023-05-18

申请号：US17455016

申请日：2021-11-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： RAMSEY HAZBUN ,  ANTHONY STAMPER ,  ZHONG-XIANG HE ,  PERNELL DONGMO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: A transistor structure is provided, the structure may be for a high electron mobility transistor (HEMT). The HEMT comprises a channel layer arranged over a substrate, the channel layer may have a top surface. A barrier layer may be arranged over the channel layer. A first opening may be in the barrier layer and extend partially into the channel layer. A first barrier liner may be arranged in the first opening and over the channel layer, the first barrier liner may have a bottom surface. The bottom surface of the first barrier liner may be lower than the top surface of the channel layer.

公开(公告)号：US20230420326A1

公开(公告)日：2023-12-28

申请号：US17808110

申请日：2022-06-22

Applicant: GlobalFoundries U.S. INC.

Inventor： ZHONG-XIANG HE ,  RAMSEY HAZBUN ,  RAJENDRAN KRISHNASAMY ,  JOHNATAN AVRAHAM KANTAROVSKY ,  MICHEL ABOU-KHALIL ,  RICHARD RASSEL

IPC: H01L23/367 ,  H01L23/48 ,  H01L21/48

CPC classification number: H01L23/367 ,  H01L29/778 ,  H01L21/4882 ,  H01L23/481

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.