公开(公告)号：US20240170575A1

公开(公告)日：2024-05-23

申请号：US18058353

申请日：2022-11-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Kiril Biserov Borisov ,  Mohammed Ahmed Fouad Ibrahim Darwish ,  Francois C. Weisbuch ,  Shady Ahmed Abdelwahed Ahmed Elshafie ,  David Charles Pritchard ,  Benoit Francois Claude Ramadout

IPC: H01L29/78

CPC classification number: H01L29/7831

Abstract: Embodiments of the disclosure provide a gate structure over a corner segment of a semiconductor region. A structure according to the disclosure includes a semiconductor region within a substrate. The semiconductor region includes a first edge, a second edge oriented perpendicularly to the first edge, and a first corner segment connecting the first edge to the second edge. A first gate structure extends over the first edge, and entirely covers the first edge and the first corner segment of the semiconductor region.