公开(公告)号：US20250079343A1

公开(公告)日：2025-03-06

申请号：US18240699

申请日：2023-08-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： David Charles Pritchard ,  Ramesh Raghavan ,  Thirunavukkarasu Ranganathan ,  Rajesh Reddy Tummuru ,  Benoit Francois Claude Ramadout ,  Luca Pirro

IPC: H01L23/00 ,  H01L29/06 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a structure and related method for a gate over semiconductor regions that are not aligned. Structures according to the disclosure include a first semiconductor region extending from a first widthwise end to a second widthwise end within a substrate. A second semiconductor region is adjacent the first semiconductor region and extends from a first widthwise end to a second widthwise end within the substrate. The second widthwise end of the second semiconductor region is non-aligned with the second widthwise end of the first semiconductor region. A gate structure is over the substrate and extends widthwise over the first semiconductor region and the second semiconductor region.

公开(公告)号：US20240170575A1

公开(公告)日：2024-05-23

申请号：US18058353

申请日：2022-11-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Kiril Biserov Borisov ,  Mohammed Ahmed Fouad Ibrahim Darwish ,  Francois C. Weisbuch ,  Shady Ahmed Abdelwahed Ahmed Elshafie ,  David Charles Pritchard ,  Benoit Francois Claude Ramadout

IPC: H01L29/78

CPC classification number: H01L29/7831

Abstract: Embodiments of the disclosure provide a gate structure over a corner segment of a semiconductor region. A structure according to the disclosure includes a semiconductor region within a substrate. The semiconductor region includes a first edge, a second edge oriented perpendicularly to the first edge, and a first corner segment connecting the first edge to the second edge. A first gate structure extends over the first edge, and entirely covers the first edge and the first corner segment of the semiconductor region.