公开(公告)号：US11177345B1

公开(公告)日：2021-11-16

申请号：US16893855

申请日：2020-06-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Henry L. Aldridge, Jr. ,  Anthony K. Stamper ,  Jeonghyun Hwang ,  Johnatan A. Kantarovsky

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/417 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first semiconductor layer including a device region; a second semiconductor layer under the first semiconductor layer; a layer of conductive material between the first semiconductor layer and the second semiconductor layer; at least one contact extending to and contacting the layer of conductive material; and a device in the device region above the layer of conductive material.

公开(公告)号：US11710655B2

公开(公告)日：2023-07-25

申请号：US17505963

申请日：2021-10-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Anthony K. Stamper ,  Henry L. Aldridge, Jr. ,  Johnatan A. Kantarovsky ,  Jeonghyun Hwang

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/763 ,  H01L21/761

CPC classification number: H01L21/76224 ,  H01L21/761 ,  H01L21/763 ,  H01L29/0649

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.

公开(公告)号：US11177158B2

公开(公告)日：2021-11-16

申请号：US16800011

申请日：2020-02-25

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Anthony K. Stamper ,  Henry L. Aldridge, Jr. ,  Johnatan A. Kantarovsky ,  Jeonghyun Hwang

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/763

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.