公开(公告)号：US12191300B2

公开(公告)日：2025-01-07

申请号：US17662921

申请日：2022-05-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Robert J. Gauthier, Jr. ,  Rajendran Krishnasamy ,  Anupam Dutta ,  Anindya Nath ,  Xiangxiang Lu ,  Satyasuresh Vvss Choppalli ,  Lin Lin

IPC: H01L27/02

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semiconductor material coupled to a first contact, and a second doped semiconductor material coupled to a second contact. The deep well couples the first doped semiconductor material to the second doped semiconductor material. A first back well is within a second portion of the deep well. A first resistive semiconductor material is within the deep well and defines a boundary between the first portion of the deep well and the second portion of the deep well.

公开(公告)号：US20230369314A1

公开(公告)日：2023-11-16

申请号：US17662921

申请日：2022-05-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Robert J. Gauthier, JR. ,  Rajendran Krishnasamy ,  Anupam Dutta ,  Anindya Nath ,  Xiangxiang Lu ,  Satyasuresh Vvss Choppalli ,  Lin Lin

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L27/0266

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semiconductor material coupled to a first contact, and a second doped semiconductor material coupled to a second contact. The deep well couples the first doped semiconductor material to the second doped semiconductor material. A first back well is within a second portion of the deep well. A first resistive semiconductor material is within the deep well and defines a boundary between the first portion of the deep well and the second portion of the deep well.