公开(公告)号：US20240079360A1

公开(公告)日：2024-03-07

申请号：US17929790

申请日：2022-09-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Jorge A. Lubguban ,  Sarah H. Knickerbocker ,  Lloyd Burrell ,  John J. Garant ,  Matthew C. Gorfien

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A bonding structure for a semiconductor substrate and related method are provided. The bonding structure includes a first oxide layer on the semiconductor substrate, and a second oxide layer on the first oxide layer, the second oxide layer for bonding to another structure. The second oxide layer has a higher stress level than the first oxide layer, and the second oxide layer is thinner than the first oxide layer. The second oxide layer may also have a higher density than the first oxide layer. The bonding structure can be used to bond chips to wafer or wafer to wafer and provides a greater bond strength than just a thick oxide layer.