公开(公告)号：US20250079343A1

公开(公告)日：2025-03-06

申请号：US18240699

申请日：2023-08-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： David Charles Pritchard ,  Ramesh Raghavan ,  Thirunavukkarasu Ranganathan ,  Rajesh Reddy Tummuru ,  Benoit Francois Claude Ramadout ,  Luca Pirro

IPC: H01L23/00 ,  H01L29/06 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a structure and related method for a gate over semiconductor regions that are not aligned. Structures according to the disclosure include a first semiconductor region extending from a first widthwise end to a second widthwise end within a substrate. A second semiconductor region is adjacent the first semiconductor region and extends from a first widthwise end to a second widthwise end within the substrate. The second widthwise end of the second semiconductor region is non-aligned with the second widthwise end of the first semiconductor region. A gate structure is over the substrate and extends widthwise over the first semiconductor region and the second semiconductor region.