公开(公告)号：US20250169087A1

公开(公告)日：2025-05-22

申请号：US18512859

申请日：2023-11-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson R. Holt ,  Crystal R. Kenney ,  Vibhor Jain ,  John J. Pekarik ,  Mona Nafari ,  Jeffrey B. Johnson

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertical heterojunction bipolar transistors and methods of manufacture. The structure includes: a sub-collector region; a collector region above the sub-collector region; an intrinsic base above the collector region; an emitter above the intrinsic base region; and an extrinsic base on the intrinsic base and adjacent to the emitter, wherein the collector region includes an undercut profile comprising lower inwardly tapered sidewalls and upper inwardly tapered sidewalls which extend to a narrow section between the sub-collector region and the base region.