公开(公告)号：US20240103217A1

公开(公告)日：2024-03-28

申请号：US17953804

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brian McGowan ,  Ping-Chuan Wang ,  Oscar Restrepo

IPC: G02B6/122

CPC classification number: G02B6/122 ,  G02B2006/12142

Abstract: Structures for a thermo-optic phase shifter and methods of forming such structures. The structure comprises a waveguide structure including a waveguide core. The structure further comprises a silicide layer, a first dielectric layer arranged in a lateral direction between the silicide layer and the waveguide core, and a second dielectric layer positioned over the waveguide core, the silicide layer, and the first dielectric layer. The first dielectric layer comprises a first material having a first thermal conductivity, and the second dielectric layer comprises a second material having a second thermal conductivity that is less than the first thermal conductivity.

公开(公告)号：US20240393624A1

公开(公告)日：2024-11-28

申请号：US18200643

申请日：2023-05-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brian McGowan ,  Ping-Chuan Wang ,  Michal Rakowski ,  Sujith Chandran ,  Yusheng Bian

IPC: G02F1/01

Abstract: Structures for a thermo-optic phase shifter and methods of forming a thermo-optic phase shifter. The structure comprises an interconnect structure including a dielectric layer, a waveguide core on the dielectric layer, and a heater on the dielectric layer. The heater includes a resistive heating element positioned adjacent to the waveguide core.

公开(公告)号：US12147074B2

公开(公告)日：2024-11-19

申请号：US17953804

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brian McGowan ,  Ping-Chuan Wang ,  Oscar Restrepo

IPC: G02B6/122 ,  G02B6/12

Abstract: Structures for a thermo-optic phase shifter and methods of forming such structures. The structure comprises a waveguide structure including a waveguide core. The structure further comprises a silicide layer, a first dielectric layer arranged in a lateral direction between the silicide layer and the waveguide core, and a second dielectric layer positioned over the waveguide core, the silicide layer, and the first dielectric layer. The first dielectric layer comprises a first material having a first thermal conductivity, and the second dielectric layer comprises a second material having a second thermal conductivity that is less than the first thermal conductivity.