公开(公告)号：US20240103217A1

公开(公告)日：2024-03-28

申请号：US17953804

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brian McGowan ,  Ping-Chuan Wang ,  Oscar Restrepo

IPC: G02B6/122

CPC classification number: G02B6/122 ,  G02B2006/12142

Abstract: Structures for a thermo-optic phase shifter and methods of forming such structures. The structure comprises a waveguide structure including a waveguide core. The structure further comprises a silicide layer, a first dielectric layer arranged in a lateral direction between the silicide layer and the waveguide core, and a second dielectric layer positioned over the waveguide core, the silicide layer, and the first dielectric layer. The first dielectric layer comprises a first material having a first thermal conductivity, and the second dielectric layer comprises a second material having a second thermal conductivity that is less than the first thermal conductivity.

公开(公告)号：US12211929B1

公开(公告)日：2025-01-28

申请号：US18663523

申请日：2024-05-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander Derrickson ,  Anupam Dutta ,  John Pekarik ,  Vibhor Jain ,  V V S S Satyasuresh Choppalli ,  Rui Tze Toh ,  Oscar Restrepo

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an intrinsic base including a first semiconductor layer, a collector including a second semiconductor layer, and an emitter including a third semiconductor layer. The first semiconductor layer, which comprises silicon-germanium, includes a first portion and a second portion adjacent to the first portion. The second semiconductor layer includes a portion on the first portion of the first semiconductor layer, and the third semiconductor layer includes a portion on the second portion of the first semiconductor layer. The structure further comprises a dielectric spacer laterally between the portion of the second semiconductor layer and the portion of the third semiconductor layer.

公开(公告)号：US12147074B2

公开(公告)日：2024-11-19

申请号：US17953804

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brian McGowan ,  Ping-Chuan Wang ,  Oscar Restrepo

IPC: G02B6/122 ,  G02B6/12

Abstract: Structures for a thermo-optic phase shifter and methods of forming such structures. The structure comprises a waveguide structure including a waveguide core. The structure further comprises a silicide layer, a first dielectric layer arranged in a lateral direction between the silicide layer and the waveguide core, and a second dielectric layer positioned over the waveguide core, the silicide layer, and the first dielectric layer. The first dielectric layer comprises a first material having a first thermal conductivity, and the second dielectric layer comprises a second material having a second thermal conductivity that is less than the first thermal conductivity.