公开(公告)号：US20240222224A1

公开(公告)日：2024-07-04

申请号：US18148404

申请日：2022-12-29

Applicant: GlobalFoundries U.S. Inc.

Inventor： SIVA P. ADUSUMILLI ,  STEVEN SHANK ,  RAJENDRAN KRISHNASAMY ,  YVES NGU

IPC: H01L23/46 ,  H01L21/20 ,  H01L21/768 ,  H01L23/13

CPC classification number: H01L23/46 ,  H01L21/20 ,  H01L21/76882 ,  H01L23/13

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel, and a semiconductor device. The channel is in the substrate for a fluid to flow through and includes a first channel portion having a first volume, a second channel portion having a second volume, and a third channel portion connecting the first channel portion to the second channel portion. The third channel portion has a third volume smaller than the first volume and the second volume. The semiconductor device is vertically over the channel.