公开(公告)号：US20090152241A1

公开(公告)日：2009-06-18

申请号：US12390231

申请日：2009-02-20

申请人： Go MIYA ,  Junichi TANAKA ,  Seiichiro KANNO ,  Naoshi ITABASHI ,  Hiroshi AKIYAMA ,  Kouhei SATOU

发明人： Go MIYA ,  Junichi TANAKA ,  Seiichiro KANNO ,  Naoshi ITABASHI ,  Hiroshi AKIYAMA ,  Kouhei SATOU

IPC分类号： H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01J37/32972

摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.

摘要翻译： 本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。 本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布 衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

公开(公告)号：US20110120649A1

公开(公告)日：2011-05-26

申请号：US13019754

申请日：2011-02-02

申请人： Kouhei SATOU ,  Go Miya ,  Hiroshi Akiyama

发明人： Kouhei SATOU ,  Go Miya ,  Hiroshi Akiyama

IPC分类号： C23F1/08

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

摘要翻译： 本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。 等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。 在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

公开(公告)号：US20120249778A1

公开(公告)日：2012-10-04

申请号：US13493133

申请日：2012-06-11

申请人： Kouhei SATOU ,  Hirotsugu TOE ,  Takafumi SATSUKI

发明人： Kouhei SATOU ,  Hirotsugu TOE ,  Takafumi SATSUKI

IPC分类号： H04N7/18

CPC分类号： G01N21/954 ,  B21C37/06 ,  B21C51/00 ,  G01B11/06 ,  G01B11/105

摘要： An inspection apparatus includes: a camera for acquiring an image of the whole area of an end face of the tubular product; a first light source for illuminating an outer peripheral edge of the end face side of the tubular product over the entire circumference thereof, a second light source for illuminating an inner peripheral edge of the end face side of the tubular product over the entire circumference thereof; and a third light source for illuminating an inner peripheral surface of the end face side of the tubular product over the entire circumference thereof. The apparatus uses the image of the tubular product using the first and second light sources to calculate an outer diameter and a wall thickness of the tubular product and illumination from the third light source for detecting a surface defect on the inner peripheral surface of the tubular product.

摘要翻译： 检查装置包括：照相机，用于获取管状产品的端面的整个区域的图像; 第一光源，其用于照射管状产品的端面侧的外周边缘的整个圆周;第二光源，用于照射管状产品的端面侧的内周边缘的整个圆周; 以及第三光源，用于在其整个圆周上照射管状产品的端面侧的内周面。 该装置使用第一和第二光源的管状产品的图像来计算管状产品的外径和壁厚以及来自第三光源的照明，用于检测管状产品的内周面上的表面缺陷 。