公开(公告)号：US20080110569A1

公开(公告)日：2008-05-15

申请号：US11682382

申请日：2007-03-06

申请人： Go Miya ,  Junichi Tanaka ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Hiroshi Akiyama ,  Kouhei Satou

发明人： Go Miya ,  Junichi Tanaka ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Hiroshi Akiyama ,  Kouhei Satou

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01J37/32972

摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.

摘要翻译： 本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。 本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布 衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

公开(公告)号：US20110120649A1

公开(公告)日：2011-05-26

申请号：US13019754

申请日：2011-02-02

申请人： Kouhei SATOU ,  Go Miya ,  Hiroshi Akiyama

发明人： Kouhei SATOU ,  Go Miya ,  Hiroshi Akiyama

IPC分类号： C23F1/08

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

摘要翻译： 本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。 等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。 在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

公开(公告)号：US07887669B2

公开(公告)日：2011-02-15

申请号：US11683040

申请日：2007-03-07

申请人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

发明人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

摘要翻译： 本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。 等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。 在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

公开(公告)号：US20080110400A1

公开(公告)日：2008-05-15

申请号：US11683040

申请日：2007-03-07

申请人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

发明人： Kouhei Satou ,  Go Miya ,  Hiroshi Akiyama

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.

摘要翻译： 本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。 等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。 在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

公开(公告)号：US20070209759A1

公开(公告)日：2007-09-13

申请号：US11501814

申请日：2006-08-10

申请人： Go Miya ,  Naoshi Itabashi ,  Seiichiro Kanno ,  Akitaka Makino ,  Hiroshi Akiyama

发明人： Go Miya ,  Naoshi Itabashi ,  Seiichiro Kanno ,  Akitaka Makino ,  Hiroshi Akiyama

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/32137 ,  H01J37/32192 ,  H01J37/3244

摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.

摘要翻译： 为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。 本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

公开(公告)号：US08231759B2

公开(公告)日：2012-07-31

申请号：US12783686

申请日：2010-05-20

申请人： Manabu Edamura ,  Go Miya ,  Ken Yoshioka

发明人： Manabu Edamura ,  Go Miya ,  Ken Yoshioka

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/321

摘要： A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.

摘要翻译： 等离子体处理装置包括处理室，用于安装待加工物体的样品台，电源以及连接到电源的至少一个感应线圈。 感应线圈通过以并联电路状布置连接至少两个相同的线圈元件而形成，使得当从样品台观察时，电流以相同的方向在多个相同的线圈元件中的每一个中流动。 感应线圈被定位成使得其中心对应于物体的中心，并且线圈元件的输入端部以相等的角度间隔沿圆周方向移位，其通过将360°除以相同线圈元件的数量而计算。

公开(公告)号：US20120070066A1

公开(公告)日：2012-03-22

申请号：US13375085

申请日：2010-06-03

申请人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Masaru Matsushima ,  Shuichi Nakagawa ,  Go Miya

发明人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Masaru Matsushima ,  Shuichi Nakagawa ,  Go Miya

IPC分类号： G06K9/00

CPC分类号： H01L21/6831 ,  H01J37/145 ,  H01J37/28 ,  H01J2237/2817 ,  H01L22/12

摘要： The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.

摘要翻译： 带电粒子束装置具有在试样的外边缘附近等待电位分布的对称性被扰乱的问题，被评估的物体导致带电粒子束在那里偏转。 安装在静电吸引型的检体保持机构内的电极板由同心配置的内外电极板形成。 外电极板的外径大于样品的外径。 确定电极板的尺寸，使得外部电极板和试样的重叠面积基本上等于内部电极板的面积。 内部电极板相对于参考电压和任意大小施加正极性的电压，并且外部电极施加负极性和任意大小的电压。

公开(公告)号：US20060043064A1

公开(公告)日：2006-03-02

申请号：US10934383

申请日：2004-09-07

申请人： Junichi Tanaka ,  Takehisa Iwakoshi ,  Seiichiro Kanno ,  Go Miya ,  Motohiko Yoshigai

发明人： Junichi Tanaka ,  Takehisa Iwakoshi ,  Seiichiro Kanno ,  Go Miya ,  Motohiko Yoshigai

IPC分类号： C23F1/00 ,  G01L21/30

CPC分类号： H01J37/32972 ,  G01N21/68 ,  G01N2021/8416 ,  H01J37/32449 ,  H01J37/32935

摘要： A plasma processing system includes a process chamber equipped with a gas supply unit, a gas exhaust and an electromagnetic energy supply unit for generating plasma from process gasses, thereby subjecting a specimen placed on a specimen stage to a plasma process. The system includes a spectrometer detecting a spectrum of plasma emission generated in the chamber, flow controllers controlling flow rates of process gasses to be supplied, and a controller controlling the flow controllers. The controller includes a calculation unit for calculating an amount of reaction byproducts generated in the chamber, in accordance with the spectrum of the plasma emission detected with the spectrometer and an input unit for inputting a target timeline of the amount of reaction byproducts, and controls amounts of the process gasses such that a calculation result of the amount of reaction byproducts becomes coincident with the input target timeline.

摘要翻译： 等离子体处理系统包括具有气体供给单元，排气口和用于从工艺气体产生等离子体的电磁能量供给单元的处理室，从而使放置在试样台上的试样进行等离子体处理。 该系统包括检测在室中产生的等离子体发射光谱的光谱仪，控制要供应的过程气体的流量的流量控制器和控制流量控制器的控制器。 控制器包括：计算单元，用于根据用光谱仪检测的等离子体发射光谱和用于输入反应副产物的量的目标时间线的输入单元计算室内产生的反应副产物的量，并控制量 的过程气体，使得反应副产物的量的计算结果与输入的目标时间线一致。

公开(公告)号：US07396771B2

公开(公告)日：2008-07-08

申请号：US11362867

申请日：2006-02-28

申请人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

发明人： Go Miya ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Junichi Tanaka ,  Masahito Mori ,  Naoyuki Kofuji ,  Go Saito

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/32137 ,  H01L21/67248 ,  H01L21/67253

摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

摘要翻译： 一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应 用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由 样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度 样品架独立控制。

公开(公告)号：US06866744B2

公开(公告)日：2005-03-15

申请号：US10229072

申请日：2002-08-28

申请人： Go Miya ,  Junichi Tanaka ,  Tsutomu Tetsuka ,  Hideyuki Yamamoto

发明人： Go Miya ,  Junichi Tanaka ,  Tsutomu Tetsuka ,  Hideyuki Yamamoto

IPC分类号： C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H01L21/00 ,  H05H1/00 ,  B08B3/12 ,  C23C16/00

CPC分类号： H01L21/67288 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32935

摘要： A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber includes a plasma generator for generating plasma inside the vacuum process chamber and a process gas supply for introducing a process gas into the vacuum process chamber. The apparatus further includes an oscillator for imparting mechanical oscillation to the semiconductor processing apparatus, a receiver for detecting mechanical oscillation generated by the oscillator in the semiconductor processing apparatus as a signal, and an analyzer for analyzing the detected signal to diagnose whether the vacuum process chamber is normally assembled.

摘要翻译： 用于对布置在真空处理室中的样品施加等离子体处理的半导体处理装置包括：用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室的工艺气体供应。 该装置还包括用于向半导体处理装置施加机械振荡的振荡器，用于检测由半导体处理装置中的振荡器产生的机械振荡作为信号的接收器，以及用于分析检测信号以诊断真空处理室 正常组装。