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1.发明授权Method of forming an overlayer including a blocking contact for cadmium selenide photoconductive imaging bodies 失效形成包括硒化镉光导成像体的阻挡接触层的覆层的方法
公开(公告)号：US3964986A
公开(公告)日：1976-06-22
申请号：US563815
申请日：1975-03-31
Applicant: Gordon Mark
Inventor： Gordon Mark
CPC classification number: C23C14/0036
Abstract: A major surface of a cadmium selenide body is exposed within a reactive sputtering apparatus to controlled bombardment with electrons, and to controlled simultaneous reactive sputter deposition of an overlayer including aluminum and oxygen.
Abstract translation: 硒化镉体的主表面在反应性溅射装置内暴露以用电子轰击以控制包括铝和氧的覆盖层的同时反应溅射沉积。
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