公开(公告)号：US20090157567A1

公开(公告)日：2009-06-18

申请号：US12356151

申请日：2009-01-20

申请人： Graham Sayers ,  Moneer Azzam ,  Joseph Bernier ,  Martin Fox ,  Robert F. Karlicek, JR. ,  Thomas M. Lemons

发明人： Graham Sayers ,  Moneer Azzam ,  Joseph Bernier ,  Martin Fox ,  Robert F. Karlicek, JR. ,  Thomas M. Lemons

IPC分类号： G06F17/00

CPC分类号： G06Q50/06

摘要： A method for optimizing an LED lighting system cost includes steps of determining LED costs, power source costs, and total costs associated with a plurality of LED quantities, and identifying a lowest total cost as an optimal cost. A LED lighting system includes an LED operated by a constant-current driver at less than its maximum current capacity. A programmable controller including a feedback routine is used to compensate for intensity drift as an LED ages. Other embodiments of LED lighting systems include multiple LEDs producing light having various spectrums to optimize the lighting system efficiency and the effectiveness. A charge controller including an MPPT routine is advantageously employed with a LED lighting system powered by a limited-capacity power source.

摘要翻译： 一种用于优化LED照明系统成本的方法包括确定LED成本，电源成本和与多个LED数量相关联的总成本以及将最低总成本确定为最佳成本的步骤。 LED照明系统包括由恒定电流驱动器操作的LED，其电流小于其最大电流容量。 使用包括反馈程序的可编程控制器来补偿随着LED老化的强度漂移。 LED照明系统的其他实施例包括产生具有各种光谱的光的多个LED，以优化照明系统的效率和有效性。 具有MPPT程序的充电控制器有利地用于由有限容量的电源供电的LED照明系统。

公开(公告)号：US07863829B2

公开(公告)日：2011-01-04

申请号：US11323005

申请日：2005-12-30

申请人： Graham Sayers ,  Moneer Azzam ,  Joseph Bernier ,  Martin Fox ,  Robert F. Karlicek, Jr. ,  Thomas M. Lemons

发明人： Graham Sayers ,  Moneer Azzam ,  Joseph Bernier ,  Martin Fox ,  Robert F. Karlicek, Jr. ,  Thomas M. Lemons

IPC分类号： H05B37/02

CPC分类号： G06Q50/06

摘要： A method for optimizing an LED lighting system cost includes steps of determining LED costs, power source costs, and total costs associated with a plurality of LED quantities, and identifying a lowest total cost as an optimal cost. A LED lighting system includes an LED operated by a constant-current driver at less than its maximum current capacity. A programmable controller including a feedback routine is used to compensate for intensity drift as an LED ages. Other embodiments of LED lighting systems include multiple LEDs producing light having various spectrums to optimize the lighting system efficiency and the effectiveness. A charge controller including an MPPT routine is advantageously employed with a LED lighting system powered by a limited-capacity power source.

摘要翻译： 一种用于优化LED照明系统成本的方法包括确定LED成本，电源成本和与多个LED数量相关联的总成本以及将最低总成本确定为最佳成本的步骤。 LED照明系统包括由恒定电流驱动器操作的LED，其电流小于其最大电流容量。 使用包括反馈程序的可编程控制器来补偿随着LED老化的强度漂移。 LED照明系统的其他实施例包括产生具有各种光谱的光的多个LED，以优化照明系统的效率和有效性。 具有MPPT程序的充电控制器有利地用于由有限容量的电源供电的LED照明系统。

公开(公告)号：US20060149607A1

公开(公告)日：2006-07-06

申请号：US11323005

申请日：2005-12-30

申请人： Graham Sayers ,  Moneer Azzam ,  Joseph Bernier ,  Martin Fox ,  Robert Karlicek ,  Thomas Lemons

发明人： Graham Sayers ,  Moneer Azzam ,  Joseph Bernier ,  Martin Fox ,  Robert Karlicek ,  Thomas Lemons

IPC分类号： G06F9/44

CPC分类号： G06Q50/06

摘要： A method for optimizing an LED lighting system cost includes steps of determining LED costs, power source costs, and total costs associated with a plurality of LED quantities, and identifying a lowest total cost as an optimal cost. A LED lighting system includes an LED operated by a constant-current driver at less than its maximum current capacity. A programmable controller including a feedback routine is used to compensate for intensity drift as an LED ages. Other embodiments of LED lighting systems include multiple LEDs producing light having various spectrums to optimize the lighting system efficiency and the effectiveness. A charge controller including an MPPT routine is advantageously employed with a LED lighting system powered by a limited-capacity power source.

摘要翻译： 一种用于优化LED照明系统成本的方法包括确定LED成本，电源成本和与多个LED数量相关联的总成本以及将最低总成本确定为最佳成本的步骤。 LED照明系统包括由恒定电流驱动器操作的LED，其电流小于其最大电流容量。 使用包括反馈程序的可编程控制器来补偿随着LED老化的强度漂移。 LED照明系统的其他实施例包括产生具有各种光谱的光的多个LED，以优化照明系统的效率和有效性。 具有MPPT程序的充电控制器有利地用于由有限容量的电源供电的LED照明系统。

公开(公告)号：US20050151160A1

公开(公告)日：2005-07-14

申请号：US11032154

申请日：2005-01-11

申请人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

发明人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

IPC分类号： H01L27/02 ,  H01L29/72

CPC分类号： H01L27/0262 ,  H01L29/7436

摘要： A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

摘要翻译： 互补的基于SCR的结构使得可调谐的保持电压具有稳健和通用的ESD保护。 结构是n沟道高保持电压低压触发硅控整流器（N-HHLVTSCR）器件和p沟道高保持电压低压触发硅控整流器（P-HHLVTSCR）器件。 N-HHLVTSCR和P-HHLVTSCR器件的区域在CMOS或BICMOS工艺的正常处理步骤期间形成。 使用N-HHLVTSCR和P-HHLVTSCR器件的掺杂区域的间距和尺寸来产生所需的特性。 可调谐的HHLVTSCR可以在广泛的ESD应用中使用该保护电路，包括保护集成电路，其中I / O信号摆幅可以在内部电路的偏置范围内或低于/高于 内部电路的偏置。

公开(公告)号：US20060151836A1

公开(公告)日：2006-07-13

申请号：US11330139

申请日：2006-01-12

申请人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

发明人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L27/0262 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region. Still further, the ESD device can include a first trigger contact and second trigger contact comprising highly doped regions of either conductivity type, the first trigger contact disposed at a junction between the first well and the second well, and the second trigger contact disposed at either well.

公开(公告)号：US20080012044A1

公开(公告)日：2008-01-17

申请号：US11691018

申请日：2007-03-26

申请人： Javier SALCEDO ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

发明人： Javier SALCEDO ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

IPC分类号： H01L29/72 ,  H01L29/74

CPC分类号： H01L27/0262 ,  H01L29/7436

摘要： A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structureare n-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

摘要翻译： 互补的基于SCR的结构使得可调谐的保持电压具有稳健和通用的ESD保护。 结构为n沟道高压保护电压低电压触发器硅控整流器（N-HHLVTSCR）器件和p沟道高保持电压低电压触发器硅控整流器（P-HHLVTSCR）器件。 N-HHLVTSCR和P-HHLVTSCR器件的区域在CMOS或BICMOS工艺的正常处理步骤期间形成。 使用N-HHLVTSCR和P-HHLVTSCR器件的掺杂区域的间距和尺寸来产生所需的特性。 可调谐的HHLVTSCR可以在广泛的ESD应用中使用该保护电路，包括保护集成电路，其中I / O信号摆幅可以在内部电路的偏置范围内或低于/高于 内部电路的偏置。

公开(公告)号：US07059749B1

公开(公告)日：2006-06-13

申请号：US11039406

申请日：2005-01-19

申请人： Joseph Bernier

发明人： Joseph Bernier

IPC分类号： F21V21/088

CPC分类号： F21V21/088 ,  F21S4/10 ,  Y10T24/344

摘要： A clipping apparatus for preventing tripping hazards caused by cords and simplifying installation of decorative lights having a tension clip. The tension clip is substantially U-shaped having an elongated member having two downwardly extending arms, each arm having a base. Each base has a small, V-shaped recessed channel through which a cord or strand of lights extends. A fully adjustable slide and click mechanism lengthens or shortens the elongated member of the tension clip. A pair of outwardly angled and extending fasteners define a simple clip mechanism attached to the elongated member and or one or both of the two arms for use in suspending the cord from tension clips installed upside down.

摘要翻译： 一种用于防止由绳索引起的跳闸危险并简化具有张紧夹的装饰灯的安装的夹持装置。 张紧夹基本上为U形，其具有带有两个向下延伸的臂的细长构件，每个臂具有一个底座。 每个底座都有一个小的V形凹槽，一条绳索或一束光线穿过它们延伸。 完全可调节的滑动和咔嗒机构延长或缩短张力夹的细长构件。 一对向外成角度和延伸的紧固件限定了附接到细长构件和/或两个臂中的一个或两个的简单夹子机构，用于将绳索从上下颠倒安装的张紧夹悬挂起来。

公开(公告)号：US20080044955A1

公开(公告)日：2008-02-21

申请号：US11871269

申请日：2007-10-12

申请人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

发明人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

IPC分类号： H01L21/332

CPC分类号： H01L29/7436 ,  H01L27/0262 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region. Still further, the ESD device can include a first trigger contact and second trigger contact comprising highly doped regions of either conductivity type, the first trigger contact disposed at a junction between the first well and the second well, and the second trigger contact disposed at either well.

摘要翻译： 提供了静电放电（ESD）装置和方法。 ESD器件可以包括掺杂到第一导电类型的衬底，掺杂到第二导电类型的外延区域，以及掺杂到设置在衬底中的第一导电类型的第一阱。 第一阱可以包括掺杂到第一导电类型的第一区域，掺杂到第二导电类型的第二区域和设置在第一区域和第二区域之间的第一隔离区域。 ESD器件还可以包括掺杂到与第一阱相邻的衬底中的第二导电类型的第二阱，其中第二阱可以包括掺杂到第一导电类型的第三区域，掺杂到第二导电类型的第四区域 以及设置在第三区域和第四区域之间的第二隔离区域。 此外，ESD装置可以包括第一触发触点和第二触发触点，其包括导电类型的高掺杂区域，第一触发触点设置在第一阱和第二阱之间的接合处，第二触发触点设置在第二触发触点 好。

公开(公告)号：US20070007545A1

公开(公告)日：2007-01-11

申请号：US11289390

申请日：2005-11-30

申请人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

发明人： Javier Salcedo ,  Juin Liou ,  Joseph Bernier ,  Donald Whitney

IPC分类号： H01L29/74

CPC分类号： H01L27/0262 ,  H01L29/87

摘要： Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor)/BiCMOS (Bipolar CMOS) technologies by custom implementation of P1-N2-P2-N1//N1-P3-N3-P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS/BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354/interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC). The ESD protection cells are tested using the TLP (Transmission Line Pulse) technique, and ESD standards including HBM (Human Body Model), MM (Machine Model), and IEC (International Electrotechnical Commission) IEC 1000-4-2 standard for ESD immunity. ESD protection performance is demonstrated also at high temperature (140° C.). The unique high ratio of dual-polarity ESD protection level per unit area, allows for integration of fast-response and compact protection cells optimized for the current tendency of the semiconductor industry toward low cost and high density-oriented IC design. Symmetric/asymmetric dual polarity ESD protection performance is demonstrated for over 15 kV HBM, 2 kV MM, and 16.5 kV IEC for sub-micron technology.

公开(公告)号：US5627472A

公开(公告)日：1997-05-06

申请号：US378688

申请日：1995-01-26

申请人： David Ofer ,  Gary M. Searle ,  Joseph Bernier

发明人： David Ofer ,  Gary M. Searle ,  Joseph Bernier

IPC分类号： G01N27/417 ,  G01R31/36 ,  H01M10/48 ,  G01N27/416

CPC分类号： H01M10/488 ,  G01N27/4175 ,  G01R31/3627 ,  G01R31/3686 ,  Y10S320/21

摘要： A tester for determining the condition of an electrochemical power source, e.g. a battery or main cell, is disclosed. The tester may comprise an electrolytic (coulometric) cell connected in series to a auxiliary cell. The auxiliary cell is a miniature electrochemical power cell. The electrolytic (coulometric) cell may have no electromotive force of its own and may comprise an anode and cathode of the same material, desirably silver, with an electrolyte contacting at least a portion of both the anode and cathode. The tester may be permanently connected in parallel to a main cell being tested and is thin enough to be integratable into a label for the main cell. As the main cell discharges, the electrolytic cell anode clears proportionally to the discharge of one of the electrodes of the main cell to provide a continuous visually discernible indication of the state of charge of the main cell.

摘要翻译： 用于确定电化学电源的状态的测试器，例如， 公开了电池或主电池。 测试器可以包括与辅助电池串联连接的电解（库仑）电池。 辅助电池是微型电化学电池。 电解（库仑）电池可以没有其自身的电动势，并且可以包括相同材料的阳极和阴极，期望为银，电解质与阳极和阴极的至少一部分接触。 测试器可以与被测试的主电池并联永久连接，并且足够薄以便可集成到主电池的标签中。 当主电池放电时，电解池阳极与主电池的一个电极的放电成比例地清除，以提供对主电池的充电状态的连续的视觉上可辨别的指示。