公开(公告)号：US20060172167A1

公开(公告)日：2006-08-03

申请号：US11364291

申请日：2006-02-28

申请人： Gregory Herman ,  Sriram Ramamoorthi ,  Peter Mardilovich ,  Ronald Enck ,  J. Smith

发明人： Gregory Herman ,  Sriram Ramamoorthi ,  Peter Mardilovich ,  Ronald Enck ,  J. Smith

IPC分类号： H01M8/12 ,  H01M8/24 ,  B29C39/00

CPC分类号： H01M8/2425 ,  H01M8/1231 ,  H01M8/124 ,  H01M8/2432 ,  Y02P70/56

摘要： An electrolyte has a core and at least one projection extending from the core. The core is supported on a substrate, and the at least one projection is separated from the substrate.

摘要翻译： 电解质具有芯和从芯延伸的至少一个突起。 芯部被支撑在基板上，并且至少一个突起与基板分离。

公开(公告)号：US20060164009A1

公开(公告)日：2006-07-27

申请号：US11387222

申请日：2006-03-22

申请人： Sriram Ramamoorthi ,  Zhizhang Chen ,  John Liebeskind ,  Ronald Enck ,  Jennifer Shih

发明人： Sriram Ramamoorthi ,  Zhizhang Chen ,  John Liebeskind ,  Ronald Enck ,  Jennifer Shih

IPC分类号： H01J61/24 ,  H01J17/22

CPC分类号： H01J7/186 ,  F04B37/02 ,  H01J19/70

摘要： A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

公开(公告)号：US20060087232A1

公开(公告)日：2006-04-27

申请号：US11255459

申请日：2005-10-20

申请人： Sriram Ramamoorthi ,  Zhizhang Chen ,  John Liebeskind ,  Ronald Enck ,  Jennifer Shih

发明人： Sriram Ramamoorthi ,  Zhizhang Chen ,  John Liebeskind ,  Ronald Enck ,  Jennifer Shih

IPC分类号： H01J9/38 ,  H01J61/26 ,  H01J17/24

CPC分类号： H01J7/183

摘要： A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

公开(公告)号：US20060121747A1

公开(公告)日：2006-06-08

申请号：US11341101

申请日：2006-01-27

申请人： Victorio Chavarria ,  Sadiq Bengali ,  Ronald Enck

发明人： Victorio Chavarria ,  Sadiq Bengali ,  Ronald Enck

IPC分类号： H01L21/8238

CPC分类号： B41J2/1603 ,  B41J2/14072 ,  B41J2/14129 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2202/13 ,  H01L21/76816 ,  H01L21/823425 ,  H01L21/823437

摘要： A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.