公开(公告)号：US5244831A

公开(公告)日：1993-09-14

申请号：US877871

申请日：1992-05-04

申请人： Gregory Hindman ,  John Rule ,  Jack Berg

发明人： Gregory Hindman ,  John Rule ,  Jack Berg

IPC分类号： H01L21/3215

CPC分类号： H01L21/32155 ,  Y10S148/122 ,  Y10S148/123

摘要： The present invention concerns a method for doping a polysilicon layer with phosphorous in which phosphorous oxychloride is supplied to the silicon wafer near the beginning of the oven temperature ramping of the silicon wafer. By introducing the phosphorous oxychloride earlier than in prior art methods, the present invention can reduce the poly rho and poly rho sigma of the doped polysilicon layer. Alternatively, the root DT of the diffusion of the doped material in the doped silicon region on the silicon wafer can be reduced, which helps to maintain the junction depth of the doped silicon region.

摘要翻译： 本发明涉及一种用磷掺杂多晶硅层的方法，其中在硅晶片的烘箱温度斜坡开始附近向硅晶片提供磷酰氯。 通过比现有技术方法更早地引入磷酰氯，本发明可以减少掺杂多晶硅层的多晶硅和多晶硅。 或者，可以减少掺杂材料在硅晶片上的掺杂硅区域中的扩散的根DT，这有助于保持掺杂硅区域的结深度。

公开(公告)号：US5240880A

公开(公告)日：1993-08-31

申请号：US878626

申请日：1992-05-05

申请人： Gregory Hindman ,  Jack Berg ,  Peter N. Manos, II

发明人： Gregory Hindman ,  Jack Berg ,  Peter N. Manos, II

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/28518

摘要： The present invention concerns a method for contact metallization on a semiconductor where a contact hole is formed in an interlevel dielectric layer down to a doped silicon region on the silicon substrate, and then the wafer is placed into a sputtering chamber where titanium is sputtered onto the wafer. A titanium nitride layer is sputtered on top of the titanium layer in the contact hole. This invention saves time and money, because the titanium nitride layer depositing and titanium layer forming steps can occur in the same chamber without forming the boro-phosphorous silicate glass layer in between. The titanium layer reacts with the silicon to form a silicide layer at the time of the sputtering in a hot deposition or in later steps that supply heat to the wafer for a period of time. Optionally, an additional titanium layer can be formed on top of the titanium nitride layer to clean off the titanium target used to sputter the titanium and titanium nitride layers on the wafer. A metal layer including aluminum is then formed on top of the titanium layer or the titanium nitride layer to form the contact metallization with the doped silicon region in the semiconductor.

摘要翻译： 本发明涉及一种在半导体上进行接触金属化的方法，其中接触孔形成在硅衬底上的掺杂硅区域之间的层间电介质层中，然后将晶片放置在溅射室中，其中钛溅射到 晶圆。 在接触孔中的钛层的顶部溅射氮化钛层。 本发明节省了时间和金钱，因为氮化钛层沉积和钛层形成步骤可以在相同的室中发生，而不在其间形成硼硅酸盐玻璃层。 钛层与硅反应，以在热沉积中溅射时形成硅化物层，或在稍后的步骤中向晶片供应一段时间。 任选地，可以在氮化钛层的顶部上形成另外的钛层以清除用于溅射晶片上的钛和氮化钛层的钛靶。 然后在钛层或氮化钛层的顶部形成包括铝的金属层，以形成与半导体中的掺杂硅区域的接触金属化。

公开(公告)号：US5338423A

公开(公告)日：1994-08-16

申请号：US972961

申请日：1992-11-06

申请人： Gregory Hindman ,  Jack Berg

发明人： Gregory Hindman ,  Jack Berg

IPC分类号： C23C14/56 ,  H01L21/768 ,  C23C14/34 ,  B65G49/05

CPC分类号： H01L21/76843 ,  C23C14/564 ,  C23C14/568 ,  H01L21/76877

摘要： The present invention concerns a method of preventing the staining and voiding in an aluminum layer. This staining and voiding was found to be caused by cross-contamination of nitrogen from other processing steps in a multi-chambered wafer processing device. The present invention avoids the staining and voiding by introducing a pumping-out step of an aluminum layer sputtering chamber to remove some of the nitrogen from the aluminum layer deposition chamber before sputtering the aluminum layer onto the silicon wafer. Alternately, the temperature of the aluminum layer deposition step can be reduced to 310.degree. C. or less to prevent the staining or voiding.

摘要翻译： 本发明涉及一种防止铝层染色和排空的方法。 发现这种染色和排空是由多室晶片处理装置中的其它处理步骤的氮的交叉污染引起的。 本发明通过引入铝层溅射室的抽出步骤，在将铝层溅射到硅晶片之前，从铝层沉积室中除去一些氮，从而避免了污染和排空。 或者，铝层沉积步骤的温度可以降低到310℃或更低，以防止染色或排空。

公开(公告)号：US5317187A

公开(公告)日：1994-05-31

申请号：US17838

申请日：1993-02-16

申请人： Gregory Hindman ,  Jack Berg ,  Peter N. Manos, II

发明人： Gregory Hindman ,  Jack Berg ,  Peter N. Manos, II

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L49/00 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54

CPC分类号： H01L21/76843 ,  H01L21/28518

摘要： The present invention concerns a method for contact metallization on a semiconductor where a contact hole is formed in an interlevel dielectric layer down to a doped silicon region on the silicon substrate, and then the wafer is placed into a sputtering chamber where titanium is sputtered onto the wafer. A titanium nitride layer is sputtered on top of the titanium layer in the contact hole. This invention saves time and money, because the titanium nitride layer depositing and titanium layer forming steps can occur in the same chamber without forming the boro-phosphorous silicate glass layer in between. The titanium layer reacts with the silicon to form a silicide layer at the time of the sputtering in a hot deposition or in later steps that supply heat to the wafer for a period of time. Optionally, an additional titanium layer can be formed on top of the titanium nitride layer to clean off the titanium target used to sputter the titanium and titanium nitride layers on the wafer. A metal layer including aluminum is then formed on top of the titanium layer or the titanium nitride layer to form the contact metallization with the doped silicon region in the semiconductor.

摘要翻译： 本发明涉及一种在半导体上进行接触金属化的方法，其中接触孔形成在硅衬底上的掺杂硅区域之间的层间电介质层中，然后将晶片放置在溅射室中，其中钛溅射到 晶圆。 在接触孔中的钛层的顶部溅射氮化钛层。 本发明节省了时间和金钱，因为氮化钛层沉积和钛层形成步骤可以在相同的室中发生，而不在其间形成硼硅酸盐玻璃层。 钛层与硅反应，以在热沉积中溅射时形成硅化物层，或在稍后的步骤中向晶片供应一段时间。 任选地，可以在氮化钛层的顶部上形成另外的钛层以清除用于溅射晶片上的钛和氮化钛层的钛靶。 然后在钛层或氮化钛层的顶部形成包括铝的金属层，以形成与半导体中的掺杂硅区域的接触金属化。