Method of fabrication MEMS integrated circuits
    7.
    发明授权
    Method of fabrication MEMS integrated circuits 有权
    MEMS集成电路的制造方法

    公开(公告)号:US07605009B2

    公开(公告)日:2009-10-20

    申请号:US11763444

    申请日:2007-06-15

    IPC分类号: H01L21/00

    摘要: A method of fabricating a plurality of MEMS integrated circuits from a wafer having a MEMS layer formed on a frontside thereof and a polymer coating over said MEMS layer, said polymer coating having a plurality of frontside dicing streets defined therethrough, said method comprising the steps of: (a) releasably attaching a first holding means to said polymer coating; and (b) performing at least one operation on a backside of the wafer, said at least one operation including etching a plurality of backside dicing streets through the wafer, each backside dicing street meeting with a respective frontside dicing street, thereby providing the plurality of MEMS integrated circuits releasably attached to said first holding means, wherein each MEMS integrated circuit comprises a respective polymer coating.

    摘要翻译: 一种制造多个MEMS集成电路的方法,该晶片具有在其前侧形成的MEMS层和在所述MEMS层上的聚合物涂层,所述聚合物涂层具有通过其定义的多个前侧切割街道,所述方法包括以下步骤: :(a)将第一保持装置可释放地附接到所述聚合物涂层; 和(b)在所述晶片的背面执行至少一个操作,所述至少一个操作包括通过所述晶片蚀刻多个后侧切割街道,每个后侧切割街道与相应的前方切割街道相交,从而提供所述多个 可释放地附接到所述第一保持装置的MEMS集成电路,其中每个MEMS集成电路包括相应的聚合物涂层。

    METHOD OF FABRICATION MEMS INTEGRATED CIRCUITS
    9.
    发明申请
    METHOD OF FABRICATION MEMS INTEGRATED CIRCUITS 有权
    制造MEMS集成电路的方法

    公开(公告)号:US20080227229A1

    公开(公告)日:2008-09-18

    申请号:US11763444

    申请日:2007-06-15

    IPC分类号: H01L21/00

    摘要: A method of fabricating a plurality of MEMS integrated circuits from a wafer having a MEMS layer formed on a frontside thereof and a polymer coating over said MEMS layer, said polymer coating having a plurality of frontside dicing streets defined therethrough, said method comprising the steps of: (a) releasably attaching a first holding means to said polymer coating; and (b) performing at least one operation on a backside of the wafer, said at least one operation including etching a plurality of backside dicing streets through the wafer, each backside dicing street meeting with a respective frontside dicing street, thereby providing the plurality of MEMS integrated circuits releasably attached to said first holding means, wherein each MEMS integrated circuit comprises a respective polymer coating.

    摘要翻译: 一种制造多个MEMS集成电路的方法,该晶片具有在其前侧形成的MEMS层和在所述MEMS层上的聚合物涂层,所述聚合物涂层具有通过其定义的多个前侧切割街道,所述方法包括以下步骤: :(a)将第一保持装置可释放地附接到所述聚合物涂层; 和(b)在所述晶片的背面执行至少一个操作,所述至少一个操作包括通过所述晶片蚀刻多个后侧切割街道,每个后侧切割街道与相应的前方切割街道相交,从而提供所述多个 可释放地附接到所述第一保持装置的MEMS集成电路,其中每个MEMS集成电路包括相应的聚合物涂层。