公开(公告)号：US09771665B2

公开(公告)日：2017-09-26

申请号：US15022532

申请日：2014-09-08

申请人： Griffith University

发明人： Francesca Iacopi ,  Mohsin Ahmed ,  Benjamin Vaughan Cunning

IPC分类号： H01L21/00 ,  C30B1/02 ,  C30B1/10 ,  C30B29/02 ,  C01B31/04 ,  B81C1/00 ,  H01L21/02

CPC分类号： C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

摘要： A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.