摘要:
A method for the preparation of a cohesive non-porous perovskite layer on a substrate (104) comprising: forming a thin film of a solution containing a perovskite material dissolved in a solvent onto the substrate to form a liquid film (104) of the solution on the substrate, applying a crystallisation agent (112) to a surface of the film to precipitate perovskite crystals from the 5 solution to form the cohesive non-porous perovskite layer (116) on the substrate.
摘要:
A method of preparing a core-shell nanorod can include growing a shell of a core-shell nanorod (M1X1)M2X2 in a solution through a slow-injection of M2 precursor solution and X2 precursor solution, wherein the core-shell nanorod includes a M1X1 core.
摘要:
Exemplary embodiments of the inventive concept provide a substrate for forming a single crystal layer with a lyophilic area having a high affinity to a single crystal material to maintain a position of the solution of the single crystal material, and a crystal growth inducing rail part formed in a shape of a line in the lyophilic area and having a higher affinity to the solution of the single crystal material than the lyophilic area.
摘要:
The present invention relates to brightness equalized quantum dots (QDs). These quantum dots are semiconductor nanocrystals having tunable fluorescence brightness across a broad range of emission colors and excitation wavelengths, enabling equalization of the light output of an array of these dots. This tunability and equalization is achieved by the chemical and structural design of the nanocrystals to obtain a predefined emission wavelength, extinction coefficient, and quantum yield for a given excitation input. These quantum dots provide improved performance for a variety of optical applications, including, e.g., fluorescence probes, solar panels, displays, and computational devices.
摘要:
A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.
摘要:
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
摘要:
In a method of generating a nanocrystal with a core-frame structure, a seed crystal, including a first substance, is exposed to a capping agent. The seed nanocrystal has a plurality of first portions that each has a first characteristic and a plurality of second portions that each has a second characteristic, different from the first characteristic. The capping agent has a tendency to adsorb to portions having the first characteristic and has a tendency not to adsorb to portions having the second characteristic. As a result, a selectively capped seed nanocrystal is generated. The selectively capped seed nanocrystal is exposed to a second substance that has a tendency to nucleate on the plurality of second portions and that does not have a tendency to nucleate on portions that have adsorbed the capping agent, thereby generating a frame structure from the plurality of second portions of the seed nanocrystal.
摘要:
A method of producing nanoparticles comprises effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles. The precursor composition comprises a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a separate second precursor species containing a second ion to be incorporated into the growing nanoparticles. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles.