公开(公告)号：US07009298B2

公开(公告)日：2006-03-07

申请号：US10639120

申请日：2003-08-11

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： H01L21/302

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor.

摘要翻译： 提供了一种接触结构，其结合使用四 - 二烷基酰氨基 - 钛，Ti（NMe 2 O 3）4 Si 3 O 4的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。 ，作为前体。

公开(公告)号：US06903010B2

公开(公告)日：2005-06-07

申请号：US10637427

申请日：2003-08-08

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

摘要翻译： 提供了一种接触结构，其结合使用四 - 二烷基酰氨基 - 钛，Ti（NMe 2 O 3）4 Si 3 O 4的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。 ，作为前体。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 以下是多晶硅或金属的化学气相沉积。

公开(公告)号：US06632736B2

公开(公告)日：2003-10-14

申请号：US09921615

申请日：2001-08-03

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： H01L214763

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through an dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

摘要翻译： Ti（NMe PDAT> 2 ）通过低压化学气相沉积（LPCVD）形成的非晶氮化钛阻挡层的接触结构， PDAT> 4 作为前体。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 多晶硅或金属的化学气相沉积如下

公开(公告)号：US5723382A

公开(公告)日：1998-03-03

申请号：US509708

申请日：1995-07-31

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28568 ,  H01L21/76843

摘要： This invention constitutes a contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe.sub.2).sub.4, as the precursor. The contact structure is fabricated by etching a contact opening through an dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon, or of metal, such as tungsten, follows, and proceeds until the contact opening is completely filled with either polycrystalline silicon or metal.

摘要翻译： 本发明构成了采用利用四 - 二烷基酰胺基钛，Ti（NMe 2）4作为前体的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层的接触结构。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 多晶硅或金属如钨的化学气相沉积随后进行，直到接触开口完全充满多晶硅或金属。

公开(公告)号：US06953743B2

公开(公告)日：2005-10-11

申请号：US10637108

申请日：2003-08-08

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

公开(公告)号：US06881667B2

公开(公告)日：2005-04-19

申请号：US10637107

申请日：2003-08-08

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

公开(公告)号：US06861351B2

公开(公告)日：2005-03-01

申请号：US10637102

申请日：2003-08-08

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

摘要翻译： 提供了一种接触结构，其结合了利用四 - 二烷基氨基 - 钛，Ti（NMe 2）4作为前体的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 以下是多晶硅或金属的化学气相沉积。

公开(公告)号：US06291340B1

公开(公告)日：2001-09-18

申请号：US09495534

申请日：2000-01-31

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： H01L214763

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： This invention constitutes a contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through an dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon, or of metal, such as tungsten, follows, and proceeds until the contact opening is completely filled with either polycrystalline silicon or metal.

摘要翻译： 本发明构成了采用利用四 - 二烷基酰胺基钛，Ti（NMe 2）4作为前体的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层的接触结构。 通过将通过电介质层的接触开口蚀刻到要进行电接触的扩散区域来制造接触结构。 钛金属沉积在晶片的表面上，使得扩散区域的暴露表面完全被金属层覆盖。 钛金属层的至少一部分最终被转化为硅化钛，从而在扩散区的表面提供优异的导电界面。 然后使用LPCVD工艺沉积氮化钛阻挡层，涂覆接触开口的壁和底板。 多晶硅或金属如钨的化学气相沉积随后进行，直到接触开口完全充满多晶硅或金属。

公开(公告)号：US6081034A

公开(公告)日：2000-06-27

申请号：US12685

申请日：1998-01-23

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： This invention constitutes a contact structure incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe.sub.2).sub.4, as the precursor. The contact structure is fabricated by etching a contact opening through an dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon, or of metal, such as tungsten, follows, and proceeds until the contact opening is completely filled with either polycrystalline silicon or metal.

公开(公告)号：US5223734A

公开(公告)日：1993-06-29

申请号：US813291

申请日：1991-12-18

申请人： Tyler A. Lowrey ,  Trung T. Doan ,  Gurtej S. Sandhu

发明人： Tyler A. Lowrey ,  Trung T. Doan ,  Gurtej S. Sandhu

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  Y10S438/928

摘要： A gettering process for semiconductor manufacturing is disclosed. The gettering process is performed after device formation and after a protective layer such as (BPSG) or (PSG) has been applied to the front side of a semiconductor wafer. The gettering process includes thinning and roughening a backside of the wafer using chemical mechanical planarization (CMP). During the (CMP) dislocations are formed which function as a trap of mobile contaminants. Additionally a gettering agent such as phosphorus is deposited and diffused into the backside of the wafer. The wafer can then be annealed for driving in the gettering agent and segregating mobile contaminants in the wafer at gettering centers formed at the dislocations and at gettering agent sites within the wafer crystal structure. The annealing step may also function to reflow and planarize the (BPSG) or (PSG) protective layer.

摘要翻译： 公开了用于半导体制造的吸气工艺。 吸收过程在器件形成之后并且在诸如（BPSG）或（PSG）的保护层已经施加到半导体晶片的正面之后进行。 吸气过程包括使用化学机械平面化（CMP）使晶片的背面变薄和粗糙化。 在（CMP）期间，形成位移作为移动污染物的陷阱。 此外，诸如磷的吸气剂沉积并扩散到晶片的背面。 然后可以将晶片退火以在吸气剂中驱动，并在晶片晶体结构中的位错处和吸气剂位置处形成的吸杂中心分离晶片中的移动污染物。 退火步骤还可以起作用以使（BPSG）或（PSG）保护层回流和平坦化。