-
1.发明授权Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same 有权具有反射镜和背面接触的绝缘体上半导体侧面p-i-n光电探测器及其形成方法公开(公告)号：US06667528B2
公开(公告)日：2003-12-23
申请号：US10033902
申请日：2002-01-03
申请人： Guy Moshe Cohen , Kern Rim , Dennis L. Rogers , Jeremy Daniel Schaub , Min Yang
发明人： Guy Moshe Cohen , Kern Rim , Dennis L. Rogers , Jeremy Daniel Schaub , Min Yang
IPC分类号： H01L31058
CPC分类号： H01L31/105 , H01L31/03529 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photodetector (and method for producing the same) includes a semiconductor substrate, a buried insulator formed on the substrate, a buried mirror formed on the buried insulator, a semiconductor-on-insulator (SOI) layer formed on the conductor, alternating n-type and p-type doped fingers formed in the semiconductor-on-insulator layer, and a backside contact to one of the p-type doped fingers and the n-type doped fingers.
摘要翻译： 光电检测器（及其制造方法）包括半导体衬底，形成在衬底上的埋入绝缘体，形成在埋层绝缘体上的掩埋反射镜，形成在导体上的绝缘体上半导体层（SOI）层， 形成在绝缘体上半导体层中的p型和p型掺杂指，以及与p型掺杂指和n型掺杂指之一的背面接触。
-
2.发明授权High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same 有权具有用于阻挡或消除慢光子载体的阻挡层的高速光电二极管及其形成方法公开(公告)号：US07161220B2
公开(公告)日：2007-01-09
申请号：US11329185
申请日：2006-01-11
IPC分类号： H01L27/14
CPC分类号： H01L31/1085 , H01L31/02327 , H01L31/035272 , H01L31/105
摘要： A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.
摘要翻译： 结构（以及形成结构的方法）包括光电检测器，形成在光电检测器下方的基板以及形成在基板上的阻挡层。 掩埋阻挡层优选地包括单个或双重p-n结或用于阻挡或消除漂移场低的区域中的慢光子生成载流子的气泡层。
-
3.发明授权High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same 有权具有用于阻挡或消除慢光子载体的阻挡层的高速光电二极管及其形成方法公开(公告)号：US07022544B2
公开(公告)日：2006-04-04
申请号：US10321660
申请日：2002-12-18
IPC分类号： H01L21/00
CPC分类号： H01L31/1085 , H01L31/02327 , H01L31/035272 , H01L31/105
摘要： A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.
摘要翻译： 结构（以及形成结构的方法）包括光电检测器，形成在光电检测器下方的基板以及形成在基板上的阻挡层。 掩埋阻挡层优选地包括单个或双重p-n结或用于阻挡或消除漂移场低的区域中的慢光子生成载流子的气泡层。
-
公开(公告)号：US07977618B2
公开(公告)日：2011-07-12
申请号：US12545320
申请日：2009-08-21
IPC分类号： G01R33/00
CPC分类号： H04B10/25
摘要： Testing is performed on an amplifier wafer housing a transimpedance amplifier prior to packaging the transimpedance amplifier with an external photodetector, wherein the transimpedance amplifier includes a small, auxiliary, integrated silicon photodetector provided at the input of the transimpedance, in parallel with external photodetector attachment points. To test the transimpedance amplifier, the transimpedance amplifier is stimulated by optically exciting the small auxiliary photodetector, wherein the small auxiliary photodetector is excited using short wavelength light, whereby advantages such as higher efficiency may be obtained. The testing method includes placing the amplifier wafer in a testing system, probing the power and ground connections on the amplifier wafer, illuminating the small auxiliary photodetector on the amplifier wafer, and detecting the output of the transimpedance amplifier housed on the amplifier wafer.
摘要翻译： 在将跨阻抗放大器封装在外部光电检测器之前，在放大器晶片上进行测试，其中跨导放大器包括一个小的辅助集成硅光电检测器，其设置在跨阻抗的输入处，与外部光电检测器连接点 。 为了测试跨阻抗放大器，通过光学激励小型辅助光电探测器来刺激跨阻放大器，其中使用短波长光来激发小的辅助光电探测器，由此可以获得诸如更高效率的优点。 测试方法包括将放大器晶片放置在测试系统中，探测放大器晶片上的电源和接地连接，照射放大器晶片上的小辅助光电检测器，以及检测放大晶片上的跨阻放大器的输出。
-
公开(公告)号：US07885540B2
公开(公告)日：2011-02-08
申请号：US12114374
申请日：2008-05-02
CPC分类号： G01M11/333 , G01M11/30
摘要： Techniques for measuring optical modulation amplitude (OMA) are disclosed. For example, a technique for measuring an OMA value associated with an input signal includes the following steps/operations. The input signal is applied to a photodetector, wherein the photodetector is calibrated to have a given responsivity value R, and further wherein the photodetector generates an output signal in response to the input signal. The output signal from the photodetector is applied to a radio frequency (RF) power meter, wherein the RF power meter measures the root mean squared (RMS) power value of the output signal received from the photodetector. The OMA value associated with the input signal is determined in response to the root mean squared (RMS) power value measured by the RF power meter. The OMA value may be determined as a function of a factor F derived from a relationship between an amplitude of a data signal and the RMS value of the data signal.
摘要翻译： 公开了用于测量光调制幅度（OMA）的技术。 例如，用于测量与输入信号相关联的OMA值的技术包括以下步骤/操作。 输入信号被施加到光电检测器，其中光电检测器被校准为具有给定的响应值R，并且其中光电检测器响应于输入信号产生输出信号。 来自光电检测器的输出信号被施加到射频（RF）功率计，其中RF功率计测量从光电检测器接收的输出信号的均方根（RMS）功率值。 响应于由RF功率计测得的均方根（RMS）功率值，确定与输入信号相关的OMA值。 可以根据数据信号的幅度与数据信号的RMS值之间的关系导出的因子F的函数来确定OMA值。
-
公开(公告)号：US07745775B2
公开(公告)日：2010-06-29
申请号：US10736424
申请日：2003-12-15
IPC分类号： H04B10/06
CPC分类号： H04B10/25
摘要： Testing is performed on an amplifier wafer housing a transimpedance amplifier prior to packaging the transimpedance amplifier with an external photodetector, wherein the transimpedance amplifier includes a small, auxiliary, integrated silicon photodetector provided at the input of the transimpedance, in parallel with external photodetector attachment points. Totest the transimpedance amplifier, the transimpedance amplifier is stimulated by optically exciting the small auxiliary photodetector, wherein the small auxiliary photodetector is excited using short wavelength light, whereby advantages such as higher efficiency may be obtained. The testing method includes placing the amplifier wafer in a testing system, probing the power and ground connections on the amplifier wafer, illuminating the small auxiliary photodetector on the amplifier wafer, and detecting the output of the transimpedance amplifier housed on the amplifier wafer.
摘要翻译： 在将跨阻抗放大器封装在外部光电检测器之前，在放大器晶片上进行测试，其中跨导放大器包括一个小的辅助集成硅光电检测器，其设置在跨阻抗的输入处，与外部光电检测器连接点 。 拍摄跨阻放大器，通过光学激发小辅助光电探测器来刺激跨阻放大器，其中使用短波长光激发小辅助光电探测器，由此可以获得诸如更高效率的优点。 测试方法包括将放大器晶片放置在测试系统中，探测放大器晶片上的电源和接地连接，照射放大器晶片上的小辅助光电检测器，以及检测放大晶片上的跨阻放大器的输出。
-
公开(公告)号：US20100045370A1
公开(公告)日：2010-02-25
申请号：US12545320
申请日：2009-08-21
IPC分类号： G01R35/00
CPC分类号： H04B10/25
摘要： Testing is performed on an amplifier wafer housing a transimpedance amplifier prior to packaging the transimpedance amplifier with an external photodetector, wherein the transimpedance amplifier includes a small, auxiliary, integrated silicon photodetector provided at the input of the transimpedance, in parallel with external photodetector attachment points. To test the transimpedance amplifier, the transimpedance amplifier is stimulated by optically exciting the small auxiliary photodetector, wherein the small auxiliary photodetector is excited using short wavelength light, whereby advantages such as higher efficiency may be obtained. The testing method includes placing the amplifier wafer in a testing system, probing the power and ground connections on the amplifier wafer, illuminating the small auxiliary photodetector on the amplifier wafer, and detecting the output of the transimpedance amplifier housed on the amplifier wafer.
摘要翻译： 在将跨阻抗放大器封装在外部光电检测器之前，在放大器晶片上进行测试，其中跨导放大器包括一个小的辅助集成硅光电检测器，其设置在跨阻抗的输入处，与外部光电检测器连接点 。 为了测试跨阻抗放大器，通过光学激励小型辅助光电探测器来刺激跨阻放大器，其中使用短波长光来激发小的辅助光电探测器，由此可以获得诸如更高效率的优点。 测试方法包括将放大器晶片放置在测试系统中，探测放大器晶片上的电源和接地连接，照射放大器晶片上的小辅助光电检测器，以及检测放大晶片上的跨阻放大器的输出。
-
公开(公告)号：US20090245789A1
公开(公告)日：2009-10-01
申请号：US12114374
申请日：2008-05-02
IPC分类号： H04B10/08
CPC分类号： G01M11/333 , G01M11/30
摘要： Techniques for measuring optical modulation amplitude (OMA) are disclosed. For example, a technique for measuring an OMA value associated with an input signal includes the following steps/operations. The input signal is applied to a photodetector, wherein the photodetector is calibrated to have a given responsivity value R, and further wherein the photodetector generates an output signal in response to the input signal. The output signal from the photodetector is applied to a radio frequency (RF) power meter, wherein the RF power meter measures the root mean squared (RMS) power value of the output signal received from the photodetector. The OMA value associated with the input signal is determined in response to the root mean squared (RMS) power value measured by the RF power meter. The OMA value may be determined as a function of a factor F derived from a relationship between an amplitude of a data signal and the RMS value of the data signal.
摘要翻译： 公开了用于测量光调制幅度（OMA）的技术。 例如，用于测量与输入信号相关联的OMA值的技术包括以下步骤/操作。 输入信号被施加到光电检测器，其中光电检测器被校准为具有给定的响应度值R，并且其中光电检测器响应于输入信号产生输出信号。 来自光电检测器的输出信号被施加到射频（RF）功率计，其中RF功率计测量从光电检测器接收的输出信号的均方根（RMS）功率值。 响应于由RF功率计测得的均方根（RMS）功率值，确定与输入信号相关的OMA值。 可以根据数据信号的幅度与数据信号的RMS值之间的关系导出的因子F的函数来确定OMA值。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.027 秒)
