公开(公告)号：US12272577B2

公开(公告)日：2025-04-08

申请号：US17908288

申请日：2021-03-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi Sakamoto ,  Takafumi Ogiwara ,  Iku Sano

IPC: H01L21/67 ,  B23K26/03 ,  B23K26/53 ,  B23K103/00 ,  G01N21/95

Abstract: An inspection device includes a laser irradiation unit irradiating a wafer with laser light, a display displaying information, and a control unit. The control unit is constituted to execute deriving of an estimated processing result including information a modified region and a crack extending from the modified region formed on the wafer when the wafer is irradiated with the laser light by the laser irradiation unit on the basis of set recipes (processing conditions), and controlling the display so as to display an estimated processing result image depicting both a graphic image of the wafer and a graphic image of the modified region and the crack in the wafer in consideration of positions of the modified region and the crack in the wafer derived as the estimated processing result.

公开(公告)号：US11450576B2

公开(公告)日：2022-09-20

申请号：US17281458

申请日：2019-10-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takeshi Sakamoto ,  Yasutaka Suzuki ,  Iku Sano

IPC: H01L21/268 ,  H01L21/66

Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.

公开(公告)号：US12023761B2

公开(公告)日：2024-07-02

申请号：US17642990

申请日：2020-09-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Iku Sano ,  Takeshi Sakamoto

IPC: B23K26/53 ,  B23K26/03

CPC classification number: B23K26/53 ,  B23K26/032

Abstract: A laser processing device includes a stage; a laser irradiation unit; an image capturing unit; a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, determining whether or not a crack extending from the modified region is in a crack reaching state where the crack has reached a front surface side of the semiconductor substrate on the basis of a signal output from the image capturing unit, and deriving information related to adjustment of irradiation conditions of the laser irradiation unit on the basis of determination results.