公开(公告)号：US12222387B2

公开(公告)日：2025-02-11

申请号：US17926376

申请日：2021-04-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Norimichi Chinone ,  Tomonori Nakamura ,  Akira Shimase ,  Shigeru Eura

IPC: G01R31/311 ,  G01R31/28

Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.