公开(公告)号：US10923404B2

公开(公告)日：2021-02-16

申请号：US16742382

申请日：2020-01-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinsuke Suzuki ,  Akira Shimase

IPC: H01L21/66 ,  G01R31/28 ,  H01L21/268 ,  H01L21/67 ,  H01L23/544

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).

公开(公告)号：US10586743B2

公开(公告)日：2020-03-10

申请号：US16478192

申请日：2017-10-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinsuke Suzuki ,  Akira Shimase ,  Shinsuke Suzuki

IPC: H01L21/66 ,  H01L21/268 ,  G01R31/28 ,  H01L21/67 ,  H01L23/544

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device including a substrate and a metal layer formed on the substrate, and the inspection method includes specifying a fault point in the semiconductor device by inspecting the semiconductor device, and irradiating the semiconductor device with laser light having a wavelength that is transmitted through the substrate from the substrate side so that a marking is formed at least at a boundary between the substrate and the metal layer on the basis of the fault point.

公开(公告)号：US12222387B2

公开(公告)日：2025-02-11

申请号：US17926376

申请日：2021-04-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Norimichi Chinone ,  Tomonori Nakamura ,  Akira Shimase ,  Shigeru Eura

IPC: G01R31/311 ,  G01R31/28

Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.

公开(公告)号：US11579184B2

公开(公告)日：2023-02-14

申请号：US16766095

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira Shimase ,  Kazuhiro Hotta

IPC: G01R31/26 ,  G01R31/28 ,  G01R1/07 ,  G01R31/265 ,  G01R31/308

Abstract: An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.

公开(公告)号：US11181361B2

公开(公告)日：2021-11-23

申请号：US16766069

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira Shimase ,  Kazuhiro Hotta

IPC: G01B11/24 ,  G01N21/956

Abstract: A semiconductor device inspection apparatus includes: a light sensor that detects light from a semiconductor device as a DUT to which an electric signal has been input; an optical system that guides light from the semiconductor device to the light sensor; and a control device electrically connected to the light sensor. The control device includes: a data reading unit that reads mask data indicating a mask layout of the semiconductor device; a search unit that searches for a position of a transistor in the semiconductor device on the basis of polygon data of a gate layer of the semiconductor device included in the mask data; a setting unit that sets the searched position of the transistor as an optical measurement target position; and a measurement unit that performs optical measurement for the set optical measurement target position to acquire a measurement result.

公开(公告)号：US10955458B2

公开(公告)日：2021-03-23

申请号：US16346594

申请日：2017-09-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toru Matsumoto ,  Akira Shimase

IPC: G01R31/265 ,  G01R31/26 ,  G01R31/302

Abstract: A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.