公开(公告)号：US20230115175A1

公开(公告)日：2023-04-13

申请号：US17915217

申请日：2021-01-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Makoto KONO ,  Yoshiyuki SUZUKI ,  Keiichi OTA ,  Shinya ITO ,  Ryo TAKIGUCHI

IPC: H01L27/146

Abstract: A solid-state imaging device includes a semiconductor substrate having a main surface provided with a plurality of light sensitive regions and an insulating film provided on the main surface of the semiconductor substrate. A plurality of uneven portions are formed on a surface (main surface) on the side opposite to the main surface of the semiconductor substrate in the insulating film and a plurality of height differences of the uneven portions exist in the light sensitive region.

公开(公告)号：US20220394204A1

公开(公告)日：2022-12-08

申请号：US17767141

申请日：2020-09-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo TAKIGUCHI ,  Shinya ITO ,  Makoto IWASHITA ,  Mitsuaki KAGEYAMA

IPC: H04N5/378 ,  G01N21/64

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.