公开(公告)号：US20210327929A1

公开(公告)日：2021-10-21

申请号：US17285201

申请日：2019-09-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo TAKIGUCHI ,  Makoto KONO ,  Keiichi OTA ,  Tetsuya TAKA

IPC: H01L27/146

Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

公开(公告)号：US20230115175A1

公开(公告)日：2023-04-13

申请号：US17915217

申请日：2021-01-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Makoto KONO ,  Yoshiyuki SUZUKI ,  Keiichi OTA ,  Shinya ITO ,  Ryo TAKIGUCHI

IPC: H01L27/146

Abstract: A solid-state imaging device includes a semiconductor substrate having a main surface provided with a plurality of light sensitive regions and an insulating film provided on the main surface of the semiconductor substrate. A plurality of uneven portions are formed on a surface (main surface) on the side opposite to the main surface of the semiconductor substrate in the insulating film and a plurality of height differences of the uneven portions exist in the light sensitive region.