公开(公告)号：US20210327929A1

公开(公告)日：2021-10-21

申请号：US17285201

申请日：2019-09-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo TAKIGUCHI ,  Makoto KONO ,  Keiichi OTA ,  Tetsuya TAKA

IPC: H01L27/146

Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 μm or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.

公开(公告)号：US20230387149A1

公开(公告)日：2023-11-30

申请号：US18027730

申请日：2021-10-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Ryo TAKIGUCHI ,  Hiroaki ISHII ,  Masaru NAKANO ,  Shin-ichiro TAKAGI

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H01L31/107 ,  H01L31/022408

Abstract: Provided is an optical sensor including: a charge generation region that generates charges in response to incident light; a charge collection region to which charges generated in the charge generation region are transferred; and at least one transfer gate electrode disposed on a transfer region between the charge generation region and the charge collection region. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication, and a gradient potential energy formation region that forms gradient potential energy that is gradient so that potential energy becomes lower as approaching the transfer region in the charge generation region.

公开(公告)号：US20230115175A1

公开(公告)日：2023-04-13

申请号：US17915217

申请日：2021-01-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Makoto KONO ,  Yoshiyuki SUZUKI ,  Keiichi OTA ,  Shinya ITO ,  Ryo TAKIGUCHI

IPC: H01L27/146

Abstract: A solid-state imaging device includes a semiconductor substrate having a main surface provided with a plurality of light sensitive regions and an insulating film provided on the main surface of the semiconductor substrate. A plurality of uneven portions are formed on a surface (main surface) on the side opposite to the main surface of the semiconductor substrate in the insulating film and a plurality of height differences of the uneven portions exist in the light sensitive region.

公开(公告)号：US20220394204A1

公开(公告)日：2022-12-08

申请号：US17767141

申请日：2020-09-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo TAKIGUCHI ,  Shinya ITO ,  Makoto IWASHITA ,  Mitsuaki KAGEYAMA

IPC: H04N5/378 ,  G01N21/64

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.