公开(公告)号：US20240283212A1

公开(公告)日：2024-08-22

申请号：US18438567

申请日：2024-02-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Keita FURUOKA ,  Atsushi SUGIYAMA ,  Takehito NAGAKURA ,  Satoru OKAWARA

IPC: H01S5/02

CPC classification number: H01S5/0203 ,  H01S5/0206

Abstract: A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer and a second step of forming a device dividing groove by etching along a device dividing line. The device dividing groove has a first portion and a second portion. At least a portion of an inner surface of the device dividing groove formed by the first portion is inclined with a Z-axis direction such that a width of the device dividing groove in a Y-axis direction decreases from a first primary surface side toward a second primary surface side. An inclination angle of an inner surface of the first portion with respect to the Z-axis direction is larger than an inclination angle of an inner surface of the second portion with respect to the Z-axis direction.

公开(公告)号：US20240283213A1

公开(公告)日：2024-08-22

申请号：US18438687

申请日：2024-02-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Keita FURUOKA ,  Satoru OKAWARA ,  Takehito NAGAKURA

IPC: H01S5/02

CPC classification number: H01S5/0203 ,  H01S5/0206

Abstract: A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer, a second step of forming a device dividing groove by etching, a third step of forming a cleavage introducing groove at a position overlapping a cleavage line, a fourth step of obtaining a plurality of laser bars by cleaving the wafer along the cleavage line, and a fifth step of cleaving each of the plurality of laser bars along the device dividing line. In the second step, the device dividing groove is not formed on the cleavage line. In the third step, the cleavage introducing groove is formed only outside a device region, or a length of a portion of the cleavage introducing groove included outside the device region is longer than a length of a portion of the cleavage introducing groove included inside the device region.