公开(公告)号：US20240291227A1

公开(公告)日：2024-08-29

申请号：US18584232

申请日：2024-02-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Satoru OKAWARA ,  Atsushi Sugiyama ,  Takehito Nagakura ,  Keita Furuoka

IPC: H01S5/02 ,  H01S5/0238 ,  H01S5/32

CPC classification number: H01S5/0202 ,  H01S5/0206 ,  H01S5/0238 ,  H01S5/3202

Abstract: Provided is a method for manufacturing a semiconductor laser device that includes a semiconductor substrate, and a semiconductor stacked body including an active layer and formed on the semiconductor substrate. The method includes a first step of preparing a wafer including a plurality of device portions to each become the semiconductor laser device, the plurality of device portions being arranged in a first direction perpendicular to an optical waveguide direction of the semiconductor stacked body, and a second step of forming a pressing mark group including a plurality of continuous pressing marks on a first primary surface of the wafer or a second primary surface opposite to the first primary surface to be positioned on each of a plurality of first boundary lines that partition the plurality of device portions arranged in the first direction after the first step.

公开(公告)号：US20210249841A1

公开(公告)日：2021-08-12

申请号：US16973602

申请日：2019-06-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuta AOKI ,  Kazuyoshi HIROSE ,  Satoru OKAWARA

IPC: H01S5/11 ,  H01S5/343 ,  H01S5/183

Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.

公开(公告)号：US20210226420A1

公开(公告)日：2021-07-22

申请号：US15734325

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuta AOKI ,  Kazuyoshi HIROSE ,  Satoru OKAWARA

IPC: H01S5/183 ,  H01S5/343

Abstract: The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.

公开(公告)号：US20240283213A1

公开(公告)日：2024-08-22

申请号：US18438687

申请日：2024-02-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Keita FURUOKA ,  Satoru OKAWARA ,  Takehito NAGAKURA

IPC: H01S5/02

CPC classification number: H01S5/0203 ,  H01S5/0206

Abstract: A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer, a second step of forming a device dividing groove by etching, a third step of forming a cleavage introducing groove at a position overlapping a cleavage line, a fourth step of obtaining a plurality of laser bars by cleaving the wafer along the cleavage line, and a fifth step of cleaving each of the plurality of laser bars along the device dividing line. In the second step, the device dividing groove is not formed on the cleavage line. In the third step, the cleavage introducing groove is formed only outside a device region, or a length of a portion of the cleavage introducing groove included outside the device region is longer than a length of a portion of the cleavage introducing groove included inside the device region.

公开(公告)号：US20240283212A1

公开(公告)日：2024-08-22

申请号：US18438567

申请日：2024-02-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Keita FURUOKA ,  Atsushi SUGIYAMA ,  Takehito NAGAKURA ,  Satoru OKAWARA

IPC: H01S5/02

CPC classification number: H01S5/0203 ,  H01S5/0206

Abstract: A method for manufacturing a semiconductor laser device of an embodiment includes a first step of preparing a wafer and a second step of forming a device dividing groove by etching along a device dividing line. The device dividing groove has a first portion and a second portion. At least a portion of an inner surface of the device dividing groove formed by the first portion is inclined with a Z-axis direction such that a width of the device dividing groove in a Y-axis direction decreases from a first primary surface side toward a second primary surface side. An inclination angle of an inner surface of the first portion with respect to the Z-axis direction is larger than an inclination angle of an inner surface of the second portion with respect to the Z-axis direction.

公开(公告)号：US20240063328A1

公开(公告)日：2024-02-22

申请号：US18270008

申请日：2021-11-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kuniyoshi YAMAUCHI ,  Minoru KONDO ,  Takayuki NAKAMURA ,  Junya MAEDA ,  Satoru OKAWARA

IPC: H01L33/00 ,  G02B21/00 ,  H01L33/12 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/007 ,  G02B21/0076 ,  H01L33/0093 ,  H01L33/12 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  G01N23/2251

Abstract: There are provided a light-emitting element, an optical detection module, a method for manufacturing a light-emitting element, and a scanning electron microscope using the same, by which it is possible to reduce crosstalk and expand the range of applications. A light-emitting element includes a fiber optic plate substrate having transparency to fluorescence and a light-emitting layer as a nitride semiconductor layer having a quantum well structure. In the light-emitting element, the fiber optic plate substrate and the light-emitting layer are directly bonded to each other.

公开(公告)号：US20180301591A1

公开(公告)日：2018-10-18

申请号：US15903200

申请日：2018-02-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masamichi YAMANISHI ,  Akira HIGUCHI ,  Toru HIROHATA ,  Kazunori TANAKA ,  Kazuue FUJITA ,  Yasufumi TAKAGI ,  Yuta AOKI ,  Satoru OKAWARA

IPC: H01L33/00 ,  H05B33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  H01L33/46 ,  H01L33/32

Abstract: An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on a second clad layer; a second electrode that is disposed on the second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.