公开(公告)号：US20240291227A1

公开(公告)日：2024-08-29

申请号：US18584232

申请日：2024-02-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Satoru OKAWARA ,  Atsushi Sugiyama ,  Takehito Nagakura ,  Keita Furuoka

IPC: H01S5/02 ,  H01S5/0238 ,  H01S5/32

CPC classification number: H01S5/0202 ,  H01S5/0206 ,  H01S5/0238 ,  H01S5/3202

Abstract: Provided is a method for manufacturing a semiconductor laser device that includes a semiconductor substrate, and a semiconductor stacked body including an active layer and formed on the semiconductor substrate. The method includes a first step of preparing a wafer including a plurality of device portions to each become the semiconductor laser device, the plurality of device portions being arranged in a first direction perpendicular to an optical waveguide direction of the semiconductor stacked body, and a second step of forming a pressing mark group including a plurality of continuous pressing marks on a first primary surface of the wafer or a second primary surface opposite to the first primary surface to be positioned on each of a plurality of first boundary lines that partition the plurality of device portions arranged in the first direction after the first step.