公开(公告)号：US20200370954A1

公开(公告)日：2020-11-26

申请号：US16963312

申请日：2019-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US20240393172A1

公开(公告)日：2024-11-28

申请号：US18691084

申请日：2022-09-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya IWASHINA ,  Terumasa NAGANO ,  Masanori OKADA ,  Shunsuke ADACHI ,  Takuya FUJITA

IPC: G01J1/44 ,  G01S7/481 ,  G01S17/08

Abstract: In a light detection device, each pixel includes a plurality of APDs. Each APD forms a light receiving region and is configured to operate in a Geiger mode. The plurality of APDs forms a plurality of light receiving regions arranged in a direction along a main surface in a pixel area α occupied by a corresponding pixel among a plurality of pixels. The MOS switch circuit region overlaps with the plurality of light receiving regions when viewed from a Z-axis direction. When viewed from the Z-axis direction, the area of the MOS switch circuit region is greater than the area of one light receiving region formed in the pixel area, and less than or equal to the area of the pixel area. A plurality of APDs included in each pixel is electrically connected in parallel to each other and each is connected to a MOS switch circuit.

公开(公告)号：US20240387754A1

公开(公告)日：2024-11-21

申请号：US18691119

申请日：2022-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya IWASHINA ,  Terumasa NAGANO ,  Masanori OKADA ,  Shunsuke ADACHI ,  Takuya FUJITA

IPC: H01L31/02 ,  H01L31/107

Abstract: In a light detection device, switches are connected in parallel to each other. Each of the switches is connected to an APD. A read line electrically connects the switch and a signal processor to each other. The switch is configured such that a second terminal is connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in a conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in the conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage less than a breakdown voltage is applied to the APD in the conductive state.

公开(公告)号：US20230358607A1

公开(公告)日：2023-11-09

申请号：US18223277

申请日：2023-07-18

Applicant: Hamamatsu Photonics K.K.

Inventor： Takuya FUJITA ,  Yusei Tamura ,  Kenji Makino ,  Takashi Baba ,  Koel Yamamoto

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

CPC classification number: G01J1/44 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/442 ,  G01J2001/4466

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US20210356319A1

公开(公告)日：2021-11-18

申请号：US17384915

申请日：2021-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.