公开(公告)号：US20210356319A1

公开(公告)日：2021-11-18

申请号：US17384915

申请日：2021-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US20200227464A1

公开(公告)日：2020-07-16

申请号：US16834121

申请日：2020-03-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Noboru HOSOKAWA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

公开(公告)号：US20190334050A1

公开(公告)日：2019-10-31

申请号：US16348187

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shigeyuki NAKAMURA ,  Shunsuke ADACHI ,  Takashi BABA ,  Terumasa NAGANO ,  Koei YAMAMOTO

IPC: H01L31/101 ,  H01L27/146 ,  H01L31/02

Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes. The number of signal processing units included on the mount substrate is more than the number of light receiving regions in each of the pixels.

公开(公告)号：US20190172965A1

公开(公告)日：2019-06-06

申请号：US16323810

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Takashi BABA ,  Terumasa NAGANO ,  Noburo HOSOKAWA

IPC: H01L31/107 ,  H01L27/144 ,  H01L27/146 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.

公开(公告)号：US20230102241A1

公开(公告)日：2023-03-30

申请号：US17801004

申请日：2021-02-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya HASHI ,  Shinya IWASHINA ,  Takashi BABA ,  Shigeyuki NAKAMURA

IPC: G01J1/44 ,  G01S7/487 ,  G01S7/493 ,  G01S7/481 ,  H01L27/144

Abstract: In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

公开(公告)号：US20210372852A1

公开(公告)日：2021-12-02

申请号：US16963303

申请日：2019-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takashi BABA ,  Tatsuya HASHI ,  Yoshihito SUZUKI ,  Kenji MAKINO ,  Shigeyuki NAKAMURA

IPC: G01J1/44 ,  G01S7/4865 ,  G01S7/4863

Abstract: A photodetector device includes an avalanche photodiode array substrate. A circuit substrate includes time measurement circuits and a clock driver. Each of the time measurement circuit includes a delay line unit, and is arranged to acquire, from an operation result of a delay line, time information indicating timing at which a pulse signal is input from a corresponding avalanche photodiode. The delay line unit is arranged to initiate an operation of the delay line in response to input of the pulse signal to the time measurement circuit, and to stop the operation of the delay line in response to input of a clock signal from a clock driver to the time measurement circuit, and is arranged to detect a time interval shorter than a cycle of the clock signal by the operation of the delay line.

公开(公告)号：US20210296387A1

公开(公告)日：2021-09-23

申请号：US17260324

申请日：2019-06-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryutaro TSUCHIYA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L27/146

Abstract: A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

公开(公告)号：US20210193707A1

公开(公告)日：2021-06-24

申请号：US17053647

申请日：2019-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Takashi BABA ,  Masanori OKADA ,  Terumasa NAGANO

IPC: H01L27/146 ,  H04N5/359

Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

公开(公告)号：US20160254307A1

公开(公告)日：2016-09-01

申请号：US15150859

申请日：2016-05-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14643 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14658 ,  H01L31/107

Abstract: A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.

Abstract translation: 光检测装置1具有半导体光检测元件，该半导体光检测元件具有半导体衬底和与半导体光检测元件相对布置的安装衬底。 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，以及电连接到各个雪崩光电二极管并且布置在半导体衬底的第二主表面侧上的电极。 安装基板包括在第三主面侧对应于各个电极布置的多个电极，并且电连接到各个电极并且布置在第三主表面侧上的淬火电阻。 电极和电极通过凸块电极连接。

公开(公告)号：US20160322405A1

公开(公告)日：2016-11-03

申请号：US15207569

申请日：2016-07-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L27/144 ,  H01L49/02 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/02

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.