公开(公告)号：US10212368B2

公开(公告)日：2019-02-19

申请号：US15739870

申请日：2016-06-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tomohiro Yamazaki ,  Takashi Suzuki

IPC: H04N5/32 ,  H04N5/341 ,  G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H04N5/357 ,  H04N5/374 ,  H04N5/372 ,  H04N5/378

Abstract: A solid-state imaging device includes a photodetecting unit and a signal readout unit, and further includes a control unit controlling an operation of each of the photodetecting unit and the signal readout unit. The photodetecting unit includes M×N pixels on a first principal surface of a semiconductor substrate having the first principal surface and a second principal surface opposite to each other. Each pixel includes a plurality of buried photodiodes, a capacitance portion a plurality of transfer switches, and an output switch.