公开(公告)号：US11004999B2

公开(公告)日：2021-05-11

申请号：US16353112

申请日：2019-03-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei Dong ,  Hiroyasu Fujiwara

IPC: H01L31/108 ,  B82Y40/00

Abstract: A photodetector element according to an aspect of the present disclosure includes a semiconductor layer with an uneven structure on one surface side that is constituted of projection portions and recess portions, and converts light into surface plasmons, and a metal film that is provided on the one surface side of the semiconductor layer in a manner corresponding to the uneven structure and a Schottky junction is formed between the metal film and the semiconductor layer. The semiconductor layer is constituted of n-type conductive silicon, and the other surface side of the semiconductor layer serves as an incident surface for light. The metal film is constituted of a material including nickel which form the Schottky junction when combined with the semiconductor layer.

公开(公告)号：US12000779B2

公开(公告)日：2024-06-04

申请号：US17543936

申请日：2021-12-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei Dong

IPC: G01N21/45 ,  G01J1/44

CPC classification number: G01N21/45 ,  G01J1/44

Abstract: An optical detector includes a semiconductor base portion of a first conductivity type having a first surface and a second surface and provided with a projection projecting from the second surface, a first metal electrode layer provided on the first surface or the second surface of the semiconductor base portion, a semiconductor layer of a second conductivity type having a first portion covering the second surface of the semiconductor base portion and second portions covering side surfaces of the projection, and a second metal electrode layer provided in close contact with the second semiconductor layer such that the projection and the second portions of the second semiconductor layer are interposed therebetween. An MIM resonator is constituted by the projection, the second portions of the second semiconductor layer, and the second metal electrode layer between which the projection and the second portions of the semiconductor layer are interposed.

公开(公告)号：US10784393B2

公开(公告)日：2020-09-22

申请号：US16100457

申请日：2018-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyasu Fujiwara ,  Wei Dong ,  Kazutoshi Nakajima ,  Shohei Hayashi

IPC: H01L31/08 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/07 ,  H01L31/10 ,  H01L31/108 ,  H01L31/101 ,  H01L31/0232 ,  H01L31/0224

Abstract: A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.

公开(公告)号：US10686094B2

公开(公告)日：2020-06-16

申请号：US16114360

申请日：2018-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei Dong ,  Hiroyasu Fujiwara ,  Kazutoshi Nakajima

IPC: H01L31/108 ,  H01L31/0232 ,  H01L31/0224 ,  G02B6/122 ,  H01L31/0352 ,  H01L31/0236 ,  G02B6/12

Abstract: A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.