公开(公告)号：US10515854B2

公开(公告)日：2019-12-24

申请号：US15322065

申请日：2016-08-30

申请人： HAN'S LASER TECHNOLOGY INDUSTRY GROUP CO., LTD.

发明人： Yanhua Wang ,  Changhui Zhuang ,  Fuhai Li ,  Wei Zeng ,  Wei Zhu ,  Jiangang Yin ,  Yunfeng Gao

IPC分类号： H01L21/78 ,  B23K26/53 ,  B23K26/402 ,  B23K26/38 ,  B23K26/0622 ,  B23K26/00 ,  B23K26/02 ,  C01B33/02 ,  B23K101/40 ,  B23K103/00

摘要： The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer (10) to form a plurality of cracking points (19), the plurality of cracking points (19) are located on a separating surface (20); and exerting, under a temperature of −400K to 0K, forces with opposite directions to opposite sides of the wafer (10), thereby dividing the wafer (10) into two pieces along the separating surface (20).

公开(公告)号：US20170151632A1

公开(公告)日：2017-06-01

申请号：US15321946

申请日：2016-04-29

申请人： HAN'S LASER TECHNOLOGY INDUSTRY GROUP CO., LTD.

发明人： Yanhua Wang ,  Zhixian Chen ,  Changhui Zhuang ,  Guodong Ma ,  Fuhai Li ,  Wei Zhu ,  Jiangang Yin ,  Yunfeng Gao

IPC分类号： B23K26/351 ,  B23K26/03 ,  H01L21/67 ,  H01L33/00 ,  H01L21/66 ,  B23K26/00 ,  C03C23/00

CPC分类号： B23K26/351 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/53 ,  B23K2101/36 ,  B23K2103/50 ,  C03C23/0025 ,  H01L21/67115 ,  H01L21/67253 ,  H01L22/20 ,  H01L33/0095

摘要： A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.

公开(公告)号：US20180108568A1

公开(公告)日：2018-04-19

申请号：US15322065

申请日：2016-08-30

申请人： HAN'S LASER TECHNOLOGY INDUSTRY GROUP CO., LTD.

发明人： Yanhua Wang ,  Changhui Zhuang ,  Fuhai Li ,  Wei Zeng ,  Wei Zhu ,  Jiangang Yin ,  Yunfeng Gao

IPC分类号： H01L21/78 ,  B23K26/00 ,  B23K26/02

摘要： The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer (10) to form a plurality of cracking points (19), the plurality of cracking points (19) are located on a separating surface (20); and exerting, under a temperature of −400K to 0K, forces with opposite directions to opposite sides of the wafer (10), thereby dividing the wafer (10) into two pieces along the separating surface (20).