公开(公告)号：US20160343938A1

公开(公告)日：2016-11-24

申请号：US15114973

申请日：2014-03-07

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Gary Gibson ,  Richard Henze ,  Warren Jackson ,  Yoocharn Jeon

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/1293 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0095 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.

Abstract translation: 具有绝热包层的回忆体装置包括第一电极，第二电极，忆阻器和绝热包层。 忆阻器以第一电极和第二电极之间的电气系列耦合。 绝热包层围绕至少一部分忆阻器。

公开(公告)号：US09716224B2

公开(公告)日：2017-07-25

申请号：US15114973

申请日：2014-03-07

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  Richard Henze ,  Warren Jackson ,  Yoocham Jeon

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/1293 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0095 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.