Power Transistor Module
    3.
    发明申请

    公开(公告)号:US20170170157A1

    公开(公告)日:2017-06-15

    申请号:US15325784

    申请日:2014-07-15

    Applicant: Hitachi, Ltd.

    Abstract: A first conductive pattern includes: a first feeding point for supplying a potential to the first conductive pattern located at one end thereof; one or more diode elements located over the first conductive pattern; and a plurality of switching elements over the first conductive pattern on the opposite side to the first feeding point with the diode elements in between. A second conductive pattern includes a second feeding point that is provided in proximity to the first feeding point and supplies a potential different from that for the first conductive pattern to the second conductive pattern. The plurality of the switching elements is electrically connected with the second conductive pattern through a plurality of bonding wires. The second conductive pattern is provided with a slit pattern that defines an area of connection of the plurality of the bonding wires with the second conductive pattern over the second conductive pattern.

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