公开(公告)号：US12125767B2

公开(公告)日：2024-10-22

申请号：US18564532

申请日：2022-04-20

Applicant: HITACHI ENERGY LTD

Inventor： Lluis Santolaria ,  Dominik Truessel ,  Harald Beyer

IPC: H01L23/40 ,  H01L21/48

CPC classification number: H01L23/4006 ,  H01L21/4871 ,  H01L2023/4087

Abstract: A clamping element (9) is specified configured to be pressed to a baseplate (2) of at least one power semiconductor module (1) comprising a mold (4), comprising —at least one contact area (10) being configured to be in direct contact to at least one clamping area (7) of the baseplate (2) being free of the mold (4), and —at least one recess (11) provided in the baseplate, wherein —the recess (11) and the contact area (10) are configured to face the baseplate. Further, a method for producing a power semiconductor device is specified.

公开(公告)号：US20240355704A1

公开(公告)日：2024-10-24

申请号：US18762854

申请日：2024-07-03

Applicant: Hitachi Energy Ltd

Inventor： Milad Maleki ,  Harald Beyer ,  Dominik Truessel

IPC: H01L23/40 ,  H01L23/31

CPC classification number: H01L23/4006 ,  H01L23/3171 ,  H01L2023/4081 ,  H01L2023/4087

Abstract: A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.

公开(公告)号：US12218192B2

公开(公告)日：2025-02-04

申请号：US17705980

申请日：2022-03-28

Applicant: Hitachi Energy Ltd

Inventor： David Guillon ,  Harald Beyer ,  Roman Ehrbar

IPC: H01L29/06 ,  H01L29/66

Abstract: A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.

公开(公告)号：US12062591B2

公开(公告)日：2024-08-13

申请号：US17159257

申请日：2021-01-27

Applicant: Hitachi Energy Ltd

Inventor： Milad Maleki ,  Harald Beyer ,  Dominik Truessel

IPC: H01L23/40 ,  H01L23/31

CPC classification number: H01L23/4006 ,  H01L23/3171 ,  H01L2023/4081 ,  H01L2023/4087

Abstract: A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.