SEMICONDUCTOR POWER DEVICE, SEMICONDUCTOR POWER SYSTEM AND METHOD FOR COOLING A SEMICONDUCTOR POWER DEVICE

    公开(公告)号:US20230335456A1

    公开(公告)日:2023-10-19

    申请号:US18121911

    申请日:2023-03-15

    摘要: A effective lower flow direction comprises power module and a housing that is arranged on an upper surface of the power module defining an upper flow section for liquid cooling of the power module in between. The upper flow section comprises an inlet, an outlet and a given upper flow path in between defining an effective upper flow direction. Further, a cooling unit is arranged on the lower surface of the power module defining a lower flow section for liquid cooling of the power module in between. The lower flow section comprises an inlet, an outlet and a given lower flow path in between defining an effective lower flow direction, such that during operation a coolant flows through the upper and the lower flow section providing a double-sided liquid cooling of the power module. The effective upper flow direction is different from the effective lower flow direction.

    POWER SEMICONDUCTOR COMPONENT
    3.
    发明公开

    公开(公告)号:US20240096746A1

    公开(公告)日:2024-03-21

    申请号:US18038545

    申请日:2021-11-24

    IPC分类号: H01L23/473

    CPC分类号: H01L23/473

    摘要: A power semiconductor component with



    power semiconductor modules connected to a cooling structure, and a cooling chamber having an inlet and outlet port, and adapted for a flow direction of a coolant substance from the inlet port to the outlet port, each of the cooling structures provided within the cooling chamber consecutively in direction of the flow direction forming a flow resistance region in the cooling chamber, the cooling chamber comprises at least a bypass region connected in parallel to at least one of the at least two flow resistance regions being closer to the inlet port, and is adapted for a flow rate of the at least one flow resistance region, which is connected in parallel to the bypass region, closer to the inlet port being smaller than a flow rate of one of the at least two flow resistance regions closer to the outlet port.