公开(公告)号：US20140116985A1

公开(公告)日：2014-05-01

申请号：US13748665

申请日：2013-01-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Jun HAYAKAWA ,  Tsutomu TETSUKA ,  Takeshi SHIMADA ,  Naohiro YAMAMOTO ,  Atsushi YOSHIDA

IPC: B44C1/22

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3116 ,  G11C11/161 ,  H01F41/307 ,  H01F41/308 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/3065 ,  H01L21/31138 ,  H01L43/12

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract translation: 本发明提供一种制造具有高绝缘层与自由层的选择比的磁阻元件的方法。 制造磁阻元件的方法包括以下步骤：准备（左图，中间图）其上设置有自由层的基板，设置在第一磁性层下的固定层，以及设置在自由层之间的绝缘层的阻挡层 层和固定层，并且通过等离子体蚀刻处理（右图）自由层，其中构成阻挡层的绝缘层包含Ta元素或Ti元素。