公开(公告)号：US20160141183A1

公开(公告)日：2016-05-19

申请号：US15003706

申请日：2016-01-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Masaru IZAWA ,  Katsushi YAGI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32706 ,  H03H7/40 ,  H05H2001/4682

Abstract: There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an RF bias power supply. Further, a bias path controller is provided on the side of the antenna electrode. The bias path controller resonates in series with the static reactance formed by the shower plate with respect to the frequency of the RF bias. Then, the bias path controller changes and grounds the impedance by the variable inductive reactance. With this mechanism, highly uniform etching can be achieved even if a shower plate of quartz is used for corrosive gases.