公开(公告)号：US20130075036A1

公开(公告)日：2013-03-28

申请号：US13680978

申请日：2012-11-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takamasa ICHINO ,  Ryoji NISHIO ,  Shinji OBAMA

IPC: B44C1/22

CPC classification number: B44C1/227 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage.