公开(公告)号：US20180211893A1

公开(公告)日：2018-07-26

申请号：US15715717

申请日：2017-09-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takamasa ICHINO ,  Kohei SATO

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/673

Abstract: A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member, and the substrate are configured to be integrally removable to an outside of the processing chamber in a state in which the plurality of temperature sensors is installed.

公开(公告)号：US20190267219A1

公开(公告)日：2019-08-29

申请号：US16111752

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi UEMURA ,  Takamasa ICHINO ,  Kazunori NAKAMOTO ,  Kohei SATO

IPC: H01J37/32

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

公开(公告)号：US20130075036A1

公开(公告)日：2013-03-28

申请号：US13680978

申请日：2012-11-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takamasa ICHINO ,  Ryoji NISHIO ,  Shinji OBAMA

IPC: B44C1/22

CPC classification number: B44C1/227 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage.

公开(公告)号：US20170025254A1

公开(公告)日：2017-01-26

申请号：US15216148

申请日：2016-07-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumi TANDOU ,  Takamasa ICHINO ,  Kenetsu YOKOGAWA ,  Yutaka OHMOTO

IPC: H01J37/32 ,  C23C16/50 ,  C23C14/48

CPC classification number: H01J37/32009 ,  H01J37/32715 ,  H01J37/32724

Abstract: A plasma processing device includes: a processing chamber which is disposed in a vacuum vessel and is compressed; a sample stage which is disposed in the processing chamber and on which a wafer of a process target is disposed and held; and a mechanism for forming plasma in the processing chamber on the sample stage, wherein the sample stage includes a block which is made of a dielectric and has a discoid shape, a jacket which is disposed below the block with a gap therebetween, is made of a metal, and has a discoid shape, a recessed portion which is disposed in a center portion of a top surface of the jacket and into which a cylindrical member disposed below a center portion of the block and made of a dielectric is inserted, and a cooling medium flow channel disposed in the jacket and through which a cooling medium circulates.

Abstract translation: 等离子体处理装置包括：处理室，其设置在真空容器中并被压缩; 设置在处理室中并且处理对象的晶片被放置并保持在其上的样本台; 以及用于在样品台上的处理室中形成等离子体的机构，其中样品台包括由电介质制成并具有圆盘状的块，在其间具有间隙的块下方设置的护套由 金属，并且具有圆盘状，凹部设置在所述护套的上表面的中心部分，并且插入设置在所述块的中心部分下方并由电介质构成的圆柱形构件，并且 冷却介质流动通道设置在外壳中，冷却介质通过该通道循环。

公开(公告)号：US20180068835A1

公开(公告)日：2018-03-08

申请号：US15437040

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Kenetsu YOKOGAWA ,  Tadayoshi KAWAGUCHI ,  Takamasa ICHINO

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32651 ,  C23C16/509 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069

Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

公开(公告)号：US20210233744A1

公开(公告)日：2021-07-29

申请号：US16646696

申请日：2019-02-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Takamasa ICHINO ,  Kohei SATO ,  Kazunori NAKAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

公开(公告)号：US20200083026A1

公开(公告)日：2020-03-12

申请号：US16561785

申请日：2019-09-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Takamasa ICHINO ,  Kohei SATO ,  Kazunori NAKAMOTO ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.