公开(公告)号：US20130299091A1

公开(公告)日：2013-11-14

申请号：US13743748

申请日：2013-01-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yusaku SAKKA ,  Ryoji NISHIO ,  Tadayoshi KAWAGUCHI ,  Tsutomu TETSUKA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321

Abstract: A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate.

Abstract translation: 等离子体处理装置包括处理室，平板状电介质窗，感应线圈，扁平电极，RF电源，气体供给单元和安装有样品的样品台。 处理气体供给板设置在处理室的内侧的电介质窗口的对面，并且在对应于处理气体供给板的气体供给位置的感应线圈的相反侧的平面电极中形成凹部。

公开(公告)号：US20130075036A1

公开(公告)日：2013-03-28

申请号：US13680978

申请日：2012-11-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takamasa ICHINO ,  Ryoji NISHIO ,  Shinji OBAMA

IPC: B44C1/22

CPC classification number: B44C1/227 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage.

公开(公告)号：US20140137059A1

公开(公告)日：2014-05-15

申请号：US14159465

申请日：2014-01-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji NISHIO ,  Tadamitsu KANEKIYO ,  Yoshiyuki OOTA ,  Tsuyoshi MATSUMOTO

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

Abstract: Plasma processing focus ring design arrangements, including: acquiring a surface voltage and a sheath thickness above a surface of the object to be processed, and a surface voltage and a sheath thickness above a surface of the focus ring, by an equivalent circuit analysis; performing 2D plasma and 2D electric field analysis, based on the equivalent circuit analysis; and designing configuration of the focus ring and the processing stage, to achieve a plasma-sheath interface flattening condition by making a sum of a height from a height reference point to a surface of the object and a sheath thickness from the surface of the object to a plasma-sheath interface above the object, equal to a sum of a height from the height reference point to a surface of the focus ring and a sheath thickness from the surface of the focus ring to a plasma-sheath interface above the focus ring.

Abstract translation: 等离子体处理聚焦环设计布置，包括：通过等效电路分析获得待处理物体表面上方的表面电压和护套厚度，以及聚焦环表面上方的表面电压和护套厚度; 基于等效电路分析进行2D等离子体和2D电场分析; 以及设计聚焦环和处理阶段的配置，通过从物体的表面到物体表面的高度和从皮肤表面到外部的厚度的和来实现等离子体 - 皮肤界面平坦化的条件 物体上方的等离子体 - 鞘界面等于从高度参考点到聚焦环表面的高度和从聚焦环表面到聚焦环上方的等离子体鞘界面的鞘厚度之和。