公开(公告)号：US20210225674A1

公开(公告)日：2021-07-22

申请号：US16646790

申请日：2019-02-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Soichiro ETO ,  Hiroyuki MINEMURA ,  Tatehito USUI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  G01B11/06

Abstract: In thickness/depth measurement of a wafer in etching, variation occurs in detected light quantity due to fluctuation of light quantity of a light source or fluctuation of air in a region through which light passes, and measurement accuracy of thickness/depth is reduced, and thus the total light quantity or average light quantity of an arbitrary wavelength is calculated from an optical spectrum measured at each time instant during etching, estimated total light quantity or estimated average light quantity at the present time, which is estimated using total light quantity or average light quantity measured prior to the present time, is calculated, a change rate, as a ratio of the total light quantity at the present time to the estimated total light quantity or a ratio of the average light quantity to the estimated average light quantity, is calculated, the calculated change rate is used to correct light quantity of each wavelength at the present time, and the corrected light quantity of each wavelength is used to perform thickness/depth measurement.

公开(公告)号：US20180277377A1

公开(公告)日：2018-09-27

申请号：US15714181

申请日：2017-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Soichiro ETO ,  Takeshi OHMORI ,  Tatehito USUI ,  Satomi INOUE

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.